Impact of Diffusion Mask Strain on Impurity-Induced Disordered VCSELs Designed for Single-Fundamental-Mode Operation

Patrick Su; Mark D. Kraman; Kevin P. Pikul; John M. Dallesasse

Impact of Diffusion Mask Strain on Impurity-Induced Disordered VCSELs Designed for Single-Fundamental-Mode Operation

Patrick Su
, Mark D. Kraman
, Kevin P. Pikul
, John M. Dallesasse

Research output: Contribution to conference › Paper › peer-review

Abstract

The strain of diffusion masks utilized for impurity-induced disordering is demonstrated to control the curvature of the diffusion front, and therefore disordering front, of the disordered distributed Bragg reflector (DBR) aperture. As a result, the disordered apertures formed under strain conditions varying from compressive to tensile are shown to significantly impact the electro-optical performance and spectral characteristics of impurity-induced disordered (IID) VCSELs designed for single-fundamental-mode operation. An investigation and analysis of the electro-optical performance and spectral characteristics of IID-VCSELs as a result of varying diffusion mask strain is presented.

Original language	English (US)
Pages	155-158
Number of pages	4
State	Published - 2022
Event	2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022 - Monterey, United States Duration: May 9 2022 → May 12 2022

Conference

Conference	2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022
Country/Territory	United States
City	Monterey
Period	5/9/22 → 5/12/22

Keywords

Vertical-cavity surface-emitting lasers
impurity-induced disordering
single-fundamental-mode VCSELs
strained diffusion masks

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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Impact of Diffusion Mask Strain on Impurity-Induced Disordered VCSELs Designed for Single-Fundamental-Mode Operation. / Su, Patrick; Kraman, Mark D.; Pikul, Kevin P. et al.
2022. 155-158 Paper presented at 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022, Monterey, United States.

Research output: Contribution to conference › Paper › peer-review

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title = "Impact of Diffusion Mask Strain on Impurity-Induced Disordered VCSELs Designed for Single-Fundamental-Mode Operation",

abstract = "The strain of diffusion masks utilized for impurity-induced disordering is demonstrated to control the curvature of the diffusion front, and therefore disordering front, of the disordered distributed Bragg reflector (DBR) aperture. As a result, the disordered apertures formed under strain conditions varying from compressive to tensile are shown to significantly impact the electro-optical performance and spectral characteristics of impurity-induced disordered (IID) VCSELs designed for single-fundamental-mode operation. An investigation and analysis of the electro-optical performance and spectral characteristics of IID-VCSELs as a result of varying diffusion mask strain is presented.",

keywords = "Vertical-cavity surface-emitting lasers, impurity-induced disordering, single-fundamental-mode VCSELs, strained diffusion masks",

author = "Patrick Su and Kraman, \{Mark D.\} and Pikul, \{Kevin P.\} and Dallesasse, \{John M.\}",

note = "This work was supported in part by the II-VI Foundation and the National Science Foundation under ECCS Grant 16-40196 and OAC Grant 1827126. This work was carried out in part in the Materials Research Laboratory Central Research Facilities at the University of Illinois at Urbana-Champaign.; 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022 ; Conference date: 09-05-2022 Through 12-05-2022",

year = "2022",

language = "English (US)",

pages = "155--158",

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TY - CONF

T1 - Impact of Diffusion Mask Strain on Impurity-Induced Disordered VCSELs Designed for Single-Fundamental-Mode Operation

AU - Su, Patrick

AU - Kraman, Mark D.

AU - Pikul, Kevin P.

AU - Dallesasse, John M.

N1 - This work was supported in part by the II-VI Foundation and the National Science Foundation under ECCS Grant 16-40196 and OAC Grant 1827126. This work was carried out in part in the Materials Research Laboratory Central Research Facilities at the University of Illinois at Urbana-Champaign.

PY - 2022

Y1 - 2022

N2 - The strain of diffusion masks utilized for impurity-induced disordering is demonstrated to control the curvature of the diffusion front, and therefore disordering front, of the disordered distributed Bragg reflector (DBR) aperture. As a result, the disordered apertures formed under strain conditions varying from compressive to tensile are shown to significantly impact the electro-optical performance and spectral characteristics of impurity-induced disordered (IID) VCSELs designed for single-fundamental-mode operation. An investigation and analysis of the electro-optical performance and spectral characteristics of IID-VCSELs as a result of varying diffusion mask strain is presented.

AB - The strain of diffusion masks utilized for impurity-induced disordering is demonstrated to control the curvature of the diffusion front, and therefore disordering front, of the disordered distributed Bragg reflector (DBR) aperture. As a result, the disordered apertures formed under strain conditions varying from compressive to tensile are shown to significantly impact the electro-optical performance and spectral characteristics of impurity-induced disordered (IID) VCSELs designed for single-fundamental-mode operation. An investigation and analysis of the electro-optical performance and spectral characteristics of IID-VCSELs as a result of varying diffusion mask strain is presented.

KW - Vertical-cavity surface-emitting lasers

KW - impurity-induced disordering

KW - single-fundamental-mode VCSELs

KW - strained diffusion masks

UR - https://www.scopus.com/pages/publications/85140248241

UR - https://www.scopus.com/pages/publications/85140248241#tab=citedBy

M3 - Paper

AN - SCOPUS:85140248241

SP - 155

EP - 158

T2 - 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022

Y2 - 9 May 2022 through 12 May 2022

ER -

Impact of Diffusion Mask Strain on Impurity-Induced Disordered VCSELs Designed for Single-Fundamental-Mode Operation

Abstract

Conference

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ASJC Scopus subject areas

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