Abstract
A measurement system was constructed to evaluate the 1/f noise of InGaP/GaAs HBTs. Our standard InGaP/GaAs HBTs have 1/f noise that is at least 10 dB less than reported AlGaAs devices and comparable to other InGaP devices. Experiments and simulations highlight the contributions of both device noise and circuit elements to the resultant oscillator phase noise in our particular Ka-band VCO circuits at 100 kHz offset.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1209-1212 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 2 |
| State | Published - 2000 |
| Event | Proceedings of the 1999 IEEE MTT-S International Microwave Symposium - Boson, MA, USA Duration: Jun 11 2000 → Jun 16 2000 |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering