Impact Ionization in Strained-Si/SiGe Heterostructures

Niamh S. Waldron, Arthur J. Pitera, Minjoo L. Lee, Eugene A. Fitzgerald, Jesús A. Del Alamo

Research output: Contribution to journalConference article

Abstract

We have experimentally studied impact ionization (II) in a strained-Si/ SiGe heterostructure. We found that, unlike bulk Si, II in this heterostructure has a positive temperature coefficient. Coupled with the severe self-heating that characterizes this heterostructure, this results in significantly higher levels of II when compared with reference Si devices operating under identical conditions.

Original languageEnglish (US)
Pages (from-to)813-816
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 2003
Externally publishedYes
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: Dec 8 2003Dec 10 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Waldron, N. S., Pitera, A. J., Lee, M. L., Fitzgerald, E. A., & Del Alamo, J. A. (2003). Impact Ionization in Strained-Si/SiGe Heterostructures. Technical Digest - International Electron Devices Meeting, 813-816.