Imaging suspended carbon nanotubes in field-effect transistors configured with microfabricated slits for transmission electron microscopy

Taekyung Kim; Jian Min Zuo; Eric A. Olson; Ivan Petrov

doi:10.1063/1.2115070

Imaging suspended carbon nanotubes in field-effect transistors configured with microfabricated slits for transmission electron microscopy

Taekyung Kim, Jian Min Zuo, Eric A. Olson, Ivan Petrov

Research output: Contribution to journal › Article › peer-review

Abstract

Field-effect transistors with carbon nanotubes (CNTs) suspended across etched slits and fabricated by chemical vapor deposition have been characterized by electrical measurements and transmission electron microscopy. Two devices are examined here: One is semiconducting from two single-wall CNTs, and the other is semiconducting and metallic, with a large off current, that comes from multiple nanotubes. The study highlights the importance of structural characterization in understanding the performance of CNT devices.

Original language	English (US)
Article number	173108
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	17
DOIs	https://doi.org/10.1063/1.2115070
State	Published - Oct 24 2005

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Physics and Astronomy (miscellaneous)

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10.1063/1.2115070

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@article{c3d1927edbe64ae5b7d067bc08e7f938,

title = "Imaging suspended carbon nanotubes in field-effect transistors configured with microfabricated slits for transmission electron microscopy",

abstract = "Field-effect transistors with carbon nanotubes (CNTs) suspended across etched slits and fabricated by chemical vapor deposition have been characterized by electrical measurements and transmission electron microscopy. Two devices are examined here: One is semiconducting from two single-wall CNTs, and the other is semiconducting and metallic, with a large off current, that comes from multiple nanotubes. The study highlights the importance of structural characterization in understanding the performance of CNT devices.",

author = "Taekyung Kim and Zuo, {Jian Min} and Olson, {Eric A.} and Ivan Petrov",

note = "Funding Information: This work was supported by U.S. Department of Energy Grant No. DEFG02-01ER45923. Microscopy was carried out at the Center for Microanalysis of Materials at the Frederick Seitz Materials Research Laboratory, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439.",

year = "2005",

month = oct,

day = "24",

doi = "10.1063/1.2115070",

language = "English (US)",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Imaging suspended carbon nanotubes in field-effect transistors configured with microfabricated slits for transmission electron microscopy

AU - Kim, Taekyung

AU - Zuo, Jian Min

AU - Olson, Eric A.

AU - Petrov, Ivan

N1 - Funding Information: This work was supported by U.S. Department of Energy Grant No. DEFG02-01ER45923. Microscopy was carried out at the Center for Microanalysis of Materials at the Frederick Seitz Materials Research Laboratory, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439.

PY - 2005/10/24

Y1 - 2005/10/24

N2 - Field-effect transistors with carbon nanotubes (CNTs) suspended across etched slits and fabricated by chemical vapor deposition have been characterized by electrical measurements and transmission electron microscopy. Two devices are examined here: One is semiconducting from two single-wall CNTs, and the other is semiconducting and metallic, with a large off current, that comes from multiple nanotubes. The study highlights the importance of structural characterization in understanding the performance of CNT devices.

AB - Field-effect transistors with carbon nanotubes (CNTs) suspended across etched slits and fabricated by chemical vapor deposition have been characterized by electrical measurements and transmission electron microscopy. Two devices are examined here: One is semiconducting from two single-wall CNTs, and the other is semiconducting and metallic, with a large off current, that comes from multiple nanotubes. The study highlights the importance of structural characterization in understanding the performance of CNT devices.

UR - http://www.scopus.com/inward/record.url?scp=28344450015&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28344450015&partnerID=8YFLogxK

U2 - 10.1063/1.2115070

DO - 10.1063/1.2115070

M3 - Article

AN - SCOPUS:28344450015

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 173108

ER -

Imaging suspended carbon nanotubes in field-effect transistors configured with microfabricated slits for transmission electron microscopy

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