@article{513ba977e34140f89fbcb1d833a1df7e,
title = "IIIB-7 Frequency Response of AlInAs/GaInAs/InP Modulation-Doped Field-Effect Transistors at Cryogenic Temperatures",
author = "J. Kolodzev and I. Adesida and J. Laskar and S. Boor and S. Reis and A. Ketterson and Cho, \{A. Y.\} and R. Fischer and D. Sivco",
note = "This work is supported by the National Science Foundation Engineering Research Center for Compound Semiconductor Microelectronics. [l] Y. K. Chen, G. W. Wang, D. C. Radulescu, and L. F. Eastman, lEEE Electron DeviceLett., vol. EDL-9, pp. 59-61, Feb. 1988. [2] M. B. Steer and R. J. Trew, IEEE Electron Device Lert., vol. EDL-7, pp. 640-642, Nov. 1986.",
year = "1988",
month = dec,
doi = "10.1109/16.8864",
language = "English (US)",
volume = "35",
pages = "2442",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}