IIIB-7 Frequency Response of AlInAs/GaInAs/InP Modulation-Doped Field-Effect Transistors at Cryogenic Temperatures

J. Kolodzev, I. Adesida, J. Laskar, S. Boor, S. Reis, A. Ketterson, A. Y. Cho, R. Fischer, D. Sivco

Research output: Contribution to journalArticlepeer-review

Original languageEnglish (US)
Pages (from-to)2442
Number of pages1
JournalIEEE Transactions on Electron Devices
Issue number12
StatePublished - Dec 1988
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this