III-V semiconductors, especially InAs, have much higher electron mobilities than Si and have been considered as promising candidates for n-channel materials for post-Si low-power CMOS logic applications. Combined with the inherent 3-D structure that enables the gate-all-around (GAA) geometry for superb gate electrostatic control, III-V nanowire (NW) MOS-FETs are well positioned to extend the scaling beyond Si. This paper attempts to provide a review of the growth and fabrication approaches (both bottom-up and top-down), and the state-of-the-art device performance of III-V NW GAA MOSFETs, as well as an outlook of their scaling potential.
- Gate-all-around (GAA)
- Nanowire (NW)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering