III-V nanowire array telecom lasers on (001) silicon-on-insulator photonic platforms

III-V nanowires have recently gained attention as a promising approach to enable monolithic integration of ultracompact lasers on silicon. However, III-V nanowires typically grow only along «111»directions, and thus, it is challenging to integrate nanowire lasers on standard silicon photonic platforms that utilize (001) silicon-on-insulator (SOI) substrates. Here, we propose III-V nanowire lasers on (001) silicon photonic platforms, which are enabled by forming one-dimensional nanowire arrays on (111) sidewalls. The one-dimensional photonic crystal laser cavity has a high Q factor >70 000 with a small footprint of ∼7.2 × 1.0 μm², and the lasing wavelengths can be tuned to cover the entire telecom bands by adjusting the nanowire geometry. These nanowire lasers can be coupled to SOI waveguides with a coupling efficiency > 40% while maintaining a sufficiently high Q factor ∼18 000, which will be beneficial for low-threshold and energy-efficient operations. Therefore, the proposed nanowire lasers could be a stepping stone for ultracompact lasers compatible with standard silicon photonic platforms.