III-V junctionless gate-all-around (GAA) nanowire MOSFETs (NWFETs) are experimentally demonstrated for the first time. Source/drain resistance and thermal budget are minimized by regrowth using metalorganic chemical vapor deposition instead of implantation. The fabricated short channel (L g=80nm GaAs GAA NWFETs with extremely scaled NW width W NW=9 nm exhibit excellent gm linearity at biases as low as 300 mV, characterized by the high third intercept point (2.6 dbm). The high linearity is insensitive to the bias conditions, which is favorable for low power applications.
- GaAs MOSFET
- gate-all-around (GAA)
- implantation-free junctionless transistor
- regrowth source/drain
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials