III-as pillar arrays by metal-assisted chemical etching for photonic applications

Parsian K. Mohseni, Lei Pan, Xiang Zhao, Seung Hyun Kim, Karthik Balasundaram, Jeong Dong Kim, James J. Coleman, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ordered arrays of GaAs/InGaAs micro and nanopillars are formed by metal-assisted chemical etching (MacEtch). The dependence of morphology and etch rate upon temperature, etchant composition, and doping concentration are explored and optical characteristics are discussed.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2013
StatePublished - 2013
EventCLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United States
Duration: Jun 9 2013Jun 14 2013

Other

OtherCLEO: Science and Innovations, CLEO_SI 2013
CountryUnited States
CitySan Jose, CA
Period6/9/136/14/13

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Mohseni, P. K., Pan, L., Zhao, X., Kim, S. H., Balasundaram, K., Kim, J. D., Coleman, J. J., & Li, X. (2013). III-as pillar arrays by metal-assisted chemical etching for photonic applications. In CLEO: Science and Innovations, CLEO_SI 2013