Identification of defect levels in Cu xAg 1-xInSe 2 thin films via photoluminescence

Angel R. Aquino; Scott A. Little; Sylvain Marsillac; Rob Collins; Angus Rockett

doi:10.1109/PVSC.2011.6186710

Identification of defect levels in Cu _xAg _1-xInSe ₂ thin films via photoluminescence

Angel R. Aquino, Scott A. Little, Sylvain Marsillac, Rob Collins, Angus Rockett

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Defect levels in polycrystalline thin films of Cu _xAg _1-xInSe ₂ deposited with x=0, 0.6, and 1.0 have been studied via photoluminescence (PL) spectroscopy. Optical transitions were identified for the films. The type of defects involved and their position in the energy gap were determined from power- and temperature-dependent PL analysis. Donor-acceptor pair transitions were observed as well as transitions from either band tails or shallow hydrogenic states near the band edges. Significant subgap emission was observed between the near band edge and ∼750 meV photon energies in all samples. An optimum Ag content was identified between 0.2 < x < 0.6.

Original language	English (US)
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	3532-3536
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2011.6186710
State	Published - 2011
Externally published	Yes
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: Jun 19 2011 → Jun 24 2011

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	6/19/11 → 6/24/11

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Online availability

10.1109/PVSC.2011.6186710

Library availability

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Cite this

Aquino, A. R., Little, S. A., Marsillac, S., Collins, R., & Rockett, A. (2011). Identification of defect levels in Cu _xAg _1-xInSe ₂ thin films via photoluminescence. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 3532-3536). Article 6186710 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6186710

Identification of defect levels in Cu _xAg _1-xInSe ₂ thin films via photoluminescence. / Aquino, Angel R.; Little, Scott A.; Marsillac, Sylvain et al.
Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 3532-3536 6186710 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Aquino, AR, Little, SA, Marsillac, S, Collins, R & Rockett, A 2011, Identification of defect levels in Cu _xAg _1-xInSe ₂ thin films via photoluminescence. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6186710, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 3532-3536, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 6/19/11. https://doi.org/10.1109/PVSC.2011.6186710

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abstract = "Defect levels in polycrystalline thin films of Cu xAg 1-xInSe 2 deposited with x=0, 0.6, and 1.0 have been studied via photoluminescence (PL) spectroscopy. Optical transitions were identified for the films. The type of defects involved and their position in the energy gap were determined from power- and temperature-dependent PL analysis. Donor-acceptor pair transitions were observed as well as transitions from either band tails or shallow hydrogenic states near the band edges. Significant subgap emission was observed between the near band edge and ∼750 meV photon energies in all samples. An optimum Ag content was identified between 0.2 < x < 0.6.",

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