Ideal anodization of silicon

Zain Yamani, W. Howard Thompson, Laila AbuHassan, Munir H. Nayfeh

Research output: Contribution to journalArticlepeer-review

Abstract

Silicon has been anodized such that the porous layer is passivated with a homogeneous stretching phase by incorporating H2O2 in the anodization mixture. Fourier transform infrared spectroscopy measurements show that the Si-H stretching mode oriented perpendicular to the surface at ∼2100cm-1 dominates the spectrum with negligible contribution from the bending modes in the 600-900 cm-1 region. Material analysis using Auger electron spectroscopy shows that the samples have very little impurities, and that the luminescent layer is very thin (5-10 nm). Scanning electron microscopy shows that the surface is smoother with features smaller than those of conventional samples.

Original languageEnglish (US)
Pages (from-to)3404-3406
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number25
DOIs
StatePublished - Jun 23 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Ideal anodization of silicon'. Together they form a unique fingerprint.

Cite this