TY - JOUR
T1 - Hydrophobic recovery in ultrathin PDMS-coated long and short silicon nanowires
AU - Ganta, D.
AU - Marry, C.
AU - Ma, J.
AU - Sinha, S.
N1 - Funding Information:
This work was supported in part by the U.S. Navy through grant no. N66001-11-1-4154 and in part by the National Science Foundation through grant no. NSF-CBET-12-50192 . We would like to thank Richard Haasck for assisting with XPS measurements.
Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.
PY - 2016/3/1
Y1 - 2016/3/1
N2 - The ability to modify the contact angle (CA) of water on silicon has applications ranging from thermal management of electronics to miniaturized biomedical devices. Here, we report ∼30 ± 1° variation in superhydrophobic CA on silicon nanowires (NWs) coated with few nm of polydimethylsiloxane (PDMS), using a simple and stable plasma treatment. The variation in CA arises from choosing NWs of different lengths. We characterize the surfaces using a combination of X-ray photoelectron spectroscopy and other techniques. Together with CA available from similar treatment on bulk silicon, it is possible to non-lithographically create regions of diverse CA, from ∼5 to 149 ± 1°.
AB - The ability to modify the contact angle (CA) of water on silicon has applications ranging from thermal management of electronics to miniaturized biomedical devices. Here, we report ∼30 ± 1° variation in superhydrophobic CA on silicon nanowires (NWs) coated with few nm of polydimethylsiloxane (PDMS), using a simple and stable plasma treatment. The variation in CA arises from choosing NWs of different lengths. We characterize the surfaces using a combination of X-ray photoelectron spectroscopy and other techniques. Together with CA available from similar treatment on bulk silicon, it is possible to non-lithographically create regions of diverse CA, from ∼5 to 149 ± 1°.
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U2 - 10.1016/j.cplett.2016.01.058
DO - 10.1016/j.cplett.2016.01.058
M3 - Article
AN - SCOPUS:84957598305
SN - 0009-2614
VL - 647
SP - 175
EP - 180
JO - Chemical Physics Letters
JF - Chemical Physics Letters
ER -