Hydrolyzation oxidation of AlxGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices

J. M. Dallesasse; N. Holonyak; A. R. Sugg; T. A. Richard; N. El-Zein

doi:10.1063/1.103759

Hydrolyzation oxidation of Al_xGa_1-xAs-AlAs-GaAs quantum well heterostructures and superlattices

J. M. Dallesasse, N. Holonyak, A. R. Sugg, T. A. Richard, N. El-Zein

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Abstract

Data are presented on the conversion (selective conversion) of high-composition (AlAs)_x(GaAs)_1-x layers, e.g., in Al _xGa_1-xAs-AlAs-GaAs quantum well heterostructures and superlattices (SLs), into dense transparent native oxide by reaction with H ₂O vapor (N₂ carrier gas) at elevated temperatures (400°C). Hydrolyzation oxidation of a fine-scale AlAs(L_B)- GaAs(L_z) SL (L_B +L_z≲100 Å), or random alloy Al_xGa_1-xAs (x≳0.7), is observed to proceed more slowly and uniformly than a coarse-scale "alloy" such as an AlAs-GaAs superlattice with L_B + L_z≳200 Å.

Original language	English (US)
Pages (from-to)	2844-2846
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	26
DOIs	https://doi.org/10.1063/1.103759
State	Published - 1990

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.103759

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Cite this

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title = "Hydrolyzation oxidation of AlxGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices",

abstract = "Data are presented on the conversion (selective conversion) of high-composition (AlAs)x(GaAs)1-x layers, e.g., in Al xGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices (SLs), into dense transparent native oxide by reaction with H 2O vapor (N2 carrier gas) at elevated temperatures (400°C). Hydrolyzation oxidation of a fine-scale AlAs(LB)- GaAs(Lz) SL (LB +Lz≲100 {\AA}), or random alloy AlxGa1-xAs (x≳0.7), is observed to proceed more slowly and uniformly than a coarse-scale {"}alloy{"} such as an AlAs-GaAs superlattice with LB + Lz≳200 {\AA}.",

author = "Dallesasse, {J. M.} and N. Holonyak and Sugg, {A. R.} and Richard, {T. A.} and N. El-Zein",

year = "1990",

doi = "10.1063/1.103759",

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journal = "Applied Physics Letters",

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T1 - Hydrolyzation oxidation of AlxGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices

AU - Dallesasse, J. M.

AU - Holonyak, N.

AU - Sugg, A. R.

AU - Richard, T. A.

AU - El-Zein, N.

PY - 1990

Y1 - 1990

N2 - Data are presented on the conversion (selective conversion) of high-composition (AlAs)x(GaAs)1-x layers, e.g., in Al xGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices (SLs), into dense transparent native oxide by reaction with H 2O vapor (N2 carrier gas) at elevated temperatures (400°C). Hydrolyzation oxidation of a fine-scale AlAs(LB)- GaAs(Lz) SL (LB +Lz≲100 Å), or random alloy AlxGa1-xAs (x≳0.7), is observed to proceed more slowly and uniformly than a coarse-scale "alloy" such as an AlAs-GaAs superlattice with LB + Lz≳200 Å.

AB - Data are presented on the conversion (selective conversion) of high-composition (AlAs)x(GaAs)1-x layers, e.g., in Al xGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices (SLs), into dense transparent native oxide by reaction with H 2O vapor (N2 carrier gas) at elevated temperatures (400°C). Hydrolyzation oxidation of a fine-scale AlAs(LB)- GaAs(Lz) SL (LB +Lz≲100 Å), or random alloy AlxGa1-xAs (x≳0.7), is observed to proceed more slowly and uniformly than a coarse-scale "alloy" such as an AlAs-GaAs superlattice with LB + Lz≳200 Å.

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