Hydrogenation of Si- and Be-doped InGaP

J. M. Dallesasse, I. Szafranek, J. N. Baillargeon, N. El-Zein, N. Holonyak, G. E. Stillman, K. Y. Cheng

Research output: Contribution to journalArticlepeer-review

Abstract

Data are presented on the hydrogenation of Be-doped (p-type) and Si-doped (n-type) In1-xGaxP epitaxial layers grown lattice matched to GaAs (x ∼ 0.5). Low-temperature (1.7 K) photoluminescence, electrochemical carrier concentration profiling, and scanning electron microscopy are used to study the effects of hydrogenation on carrier recombination, carrier concentration, and surface morphology. Hydrogenation is found to passivate Si donors and Be acceptors and to improve photoluminescence efficiency, but causes mild surface damage. The carrier concentration following hydrogenation is found to be lowest in acceptor-doped material.

Original languageEnglish (US)
Pages (from-to)5866-5870
Number of pages5
JournalJournal of Applied Physics
Volume68
Issue number11
DOIs
StatePublished - 1990

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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