Hydrogenation of Si- and Be-doped InGaP

Data are presented on the hydrogenation of Be-doped (p-type) and Si-doped (n-type) In_1-xGa_xP epitaxial layers grown lattice matched to GaAs (x ∼ 0.5). Low-temperature (1.7 K) photoluminescence, electrochemical carrier concentration profiling, and scanning electron microscopy are used to study the effects of hydrogenation on carrier recombination, carrier concentration, and surface morphology. Hydrogenation is found to passivate Si donors and Be acceptors and to improve photoluminescence efficiency, but causes mild surface damage. The carrier concentration following hydrogenation is found to be lowest in acceptor-doped material.