Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In0.5(AlxGa 1-x)0.5P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.
|Original language||English (US)|
|Number of pages||3|
|Journal||Journal of Applied Physics|
|State||Published - 1990|
ASJC Scopus subject areas
- Physics and Astronomy(all)