Hydrogenation-defined stripe-geometry In0.5(Al xGa1-x)0.5P quantum-well lasers

J. M. Dallesasse; N. El-Zein; N. Holonyak; R. M. Fletcher; C. P. Kuo; T. D. Osentowski; M. G. Craford

doi:10.1063/1.346962

Hydrogenation-defined stripe-geometry In_0.5(Al _xGa_1-x)_0.5P quantum-well lasers

J. M. Dallesasse, N. El-Zein, N. Holonyak, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, M. G. Craford

Research output: Contribution to journal › Article › peer-review

Abstract

Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In_0.5(Al_xGa _1-x)_0.5P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.

Original language	English (US)
Pages (from-to)	5871-5873
Number of pages	3
Journal	Journal of Applied Physics
Volume	68
Issue number	11
DOIs	https://doi.org/10.1063/1.346962
State	Published - 1990

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.346962

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Cite this

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title = "Hydrogenation-defined stripe-geometry In0.5(Al xGa1-x)0.5P quantum-well lasers",

abstract = "Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In0.5(AlxGa 1-x)0.5P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.",

author = "Dallesasse, {J. M.} and N. El-Zein and N. Holonyak and Fletcher, {R. M.} and Kuo, {C. P.} and Osentowski, {T. D.} and Craford, {M. G.}",

year = "1990",

doi = "10.1063/1.346962",

language = "English (US)",

volume = "68",

pages = "5871--5873",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Hydrogenation-defined stripe-geometry In0.5(Al xGa1-x)0.5P quantum-well lasers

AU - Dallesasse, J. M.

AU - El-Zein, N.

AU - Holonyak, N.

AU - Fletcher, R. M.

AU - Kuo, C. P.

AU - Osentowski, T. D.

AU - Craford, M. G.

PY - 1990

Y1 - 1990

N2 - Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In0.5(AlxGa 1-x)0.5P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.

AB - Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In0.5(AlxGa 1-x)0.5P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.

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