Hydrogenation-defined stripe-geometry In0.5(Al xGa1-x)0.5P quantum-well lasers

J. M. Dallesasse, N. El-Zein, N. Holonyak, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, M. G. Craford

Research output: Contribution to journalArticlepeer-review

Abstract

Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In0.5(AlxGa 1-x)0.5P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.

Original languageEnglish (US)
Pages (from-to)5871-5873
Number of pages3
JournalJournal of Applied Physics
Volume68
Issue number11
DOIs
StatePublished - Dec 1 1990

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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