Hydrogen structures in heavily hydrogenated crystalline and amorphous silicon

W. B. Jackson, A. Franz, Y. Chabal, M. K. Weldon, H. C. Jin, J. R. Abelson

Research output: Contribution to journalConference articlepeer-review

Abstract

The hydrogen binding energy distribution and IR spectra of hydrogen platelets in c-Si have been measured and compared to H in other forms of silicon including hydrogenated polycrystalline and amorphous Si. The binding distribution for platelet containing samples, determined using H evolution, exhibits two peaks: a bulk peak at 1.8-1.9 eV below the transport barrier, and a second possibly surface related peak 1.8-1.9 eV below the surface evolution barrier. The bulk peak grows at 250 C and is consistent with calculated energies for platelet structures. The same two evolution peaks are found in hydrogenated polycrystalline Si and amorphous silicon. The IR spectra for heavily hydrogenated c-Si are dominated by the stretching modes at 2076 and 2128 cm-1. Most surprisingly there appears to be a strong mode at 856 cm-1 which is associated with a deformation mode of SiH3. Even more surprising, this SiH3 856 cm-1 mode remains until 550 C indicating that the SiH3 containing structures are rather stable.

Original languageEnglish (US)
Pages (from-to)381-386
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume513
DOIs
StatePublished - Jan 1 1998
Externally publishedYes
EventProceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1998Apr 17 1998

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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