Hydrogen-related extrinsic oxide trap generation in thin gate oxide film during negative-bias temperature instability stress

Keyphrases

• Deuterium 100%
• Oxide Film 100%
• Negative Bias Temperature Instability 100%
• Trap Generation 100%
• Oxide Traps 100%
• Thin Gate Oxide 100%
• Annealing 50%
• High Density 50%
• High Pressure 50%
• Isotope Effect 50%
• Gate Oxide 50%
• Extrinsic Defects 50%
• Annealing Process 50%
• PMOSFET 50%
• Ultra-thin Gate Oxide 50%
• Interface Reaction 50%
• Forming Gas 50%
• Deuterium Annealing 50%
• Oxide Charge 50%
• Extended Model 50%
• Forming Gas Annealing 50%
• GAS Process 50%
• Recovery Effect 50%
• NBTI Stress 50%
• NBTI Degradation 50%
• High-pressure Hydrogen Annealing 50%

Material Science

• Oxide Compound 100%
• Annealing 100%
• Deuterium 100%
• Oxide Film 100%
• Negative-Bias Temperature Instability 100%
• Density 66%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%

Engineering

• Gate Oxide 100%
• Oxide Film 100%
• Negative-Bias Temperature Instability 100%
• Defects 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%
• Process Gas 33%
• Annealing Process 33%
• Show Effect 33%
• Interface Reaction 33%