Hydrogen-related extrinsic oxide trap generation in thin gate oxide film during negative-bias temperature instability stress

Jae Sung Lee, Joseph W. Lyding, Karl Hess

Research output: Contribution to journalConference articlepeer-review

Abstract

This paper presents an extended model for the negative-bias temperature instability in p-MOSFET's with 3 nm gate oxide film. The devices, annealed with a standard forming gas (FG) process, have been subjected to an additional annealing process under high pressure, using both hydrogen and deuterium. We found that NBTI was accelerated by the high-pressure hydrogen (or deuterium) annealing compared to the standard FG annealing. This is attributed to the higher hydrogen (deuterium) density, and that in turn causes higher densities of oxide charges under NBTI stress. Our investigation of recovery and isotope effect shows that both interface-reaction and bulk-reaction, which can be plausible by extrinsic defect, are among the origins of NBTI degradation in ultra-thin gate oxide.

Original languageEnglish (US)
Pages (from-to)685-686
Number of pages2
JournalAnnual Proceedings - Reliability Physics (Symposium)
StatePublished - 2004
Event2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual - Phoenix, AZ., United States
Duration: Apr 25 2004Apr 29 2004

Keywords

  • Deuterium
  • Hydrogen
  • Negative-bias-temperature instability
  • Oxide trap

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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