Hydrogen-related extrinsic oxide trap generation in thin gate oxide film during negative-bias temperature instability stress

Jae Sung Lee, Joseph W. Lyding, Karl Hess

Research output: Contribution to journalConference article

Abstract

This paper presents an extended model for the negative-bias temperature instability in p-MOSFET's with 3 nm gate oxide film. The devices, annealed with a standard forming gas (FG) process, have been subjected to an additional annealing process under high pressure, using both hydrogen and deuterium. We found that NBTI was accelerated by the high-pressure hydrogen (or deuterium) annealing compared to the standard FG annealing. This is attributed to the higher hydrogen (deuterium) density, and that in turn causes higher densities of oxide charges under NBTI stress. Our investigation of recovery and isotope effect shows that both interface-reaction and bulk-reaction, which can be plausible by extrinsic defect, are among the origins of NBTI degradation in ultra-thin gate oxide.

Original languageEnglish (US)
Pages (from-to)685-686
Number of pages2
JournalAnnual Proceedings - Reliability Physics (Symposium)
StatePublished - Jul 12 2004
Event2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual - Phoenix, AZ., United States
Duration: Apr 25 2004Apr 29 2004

Fingerprint

Oxide films
Deuterium
Hydrogen
Oxides
Annealing
Gases
Isotopes
Recovery
Degradation
Defects
Negative bias temperature instability

Keywords

  • Deuterium
  • Hydrogen
  • Negative-bias-temperature instability
  • Oxide trap

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

@article{32b467b6a775475e8e2c2636fb632b53,
title = "Hydrogen-related extrinsic oxide trap generation in thin gate oxide film during negative-bias temperature instability stress",
abstract = "This paper presents an extended model for the negative-bias temperature instability in p-MOSFET's with 3 nm gate oxide film. The devices, annealed with a standard forming gas (FG) process, have been subjected to an additional annealing process under high pressure, using both hydrogen and deuterium. We found that NBTI was accelerated by the high-pressure hydrogen (or deuterium) annealing compared to the standard FG annealing. This is attributed to the higher hydrogen (deuterium) density, and that in turn causes higher densities of oxide charges under NBTI stress. Our investigation of recovery and isotope effect shows that both interface-reaction and bulk-reaction, which can be plausible by extrinsic defect, are among the origins of NBTI degradation in ultra-thin gate oxide.",
keywords = "Deuterium, Hydrogen, Negative-bias-temperature instability, Oxide trap",
author = "Lee, {Jae Sung} and Lyding, {Joseph W.} and Karl Hess",
year = "2004",
month = "7",
day = "12",
language = "English (US)",
pages = "685--686",
journal = "Annual Proceedings - Reliability Physics (Symposium)",
issn = "0099-9512",

}

TY - JOUR

T1 - Hydrogen-related extrinsic oxide trap generation in thin gate oxide film during negative-bias temperature instability stress

AU - Lee, Jae Sung

AU - Lyding, Joseph W.

AU - Hess, Karl

PY - 2004/7/12

Y1 - 2004/7/12

N2 - This paper presents an extended model for the negative-bias temperature instability in p-MOSFET's with 3 nm gate oxide film. The devices, annealed with a standard forming gas (FG) process, have been subjected to an additional annealing process under high pressure, using both hydrogen and deuterium. We found that NBTI was accelerated by the high-pressure hydrogen (or deuterium) annealing compared to the standard FG annealing. This is attributed to the higher hydrogen (deuterium) density, and that in turn causes higher densities of oxide charges under NBTI stress. Our investigation of recovery and isotope effect shows that both interface-reaction and bulk-reaction, which can be plausible by extrinsic defect, are among the origins of NBTI degradation in ultra-thin gate oxide.

AB - This paper presents an extended model for the negative-bias temperature instability in p-MOSFET's with 3 nm gate oxide film. The devices, annealed with a standard forming gas (FG) process, have been subjected to an additional annealing process under high pressure, using both hydrogen and deuterium. We found that NBTI was accelerated by the high-pressure hydrogen (or deuterium) annealing compared to the standard FG annealing. This is attributed to the higher hydrogen (deuterium) density, and that in turn causes higher densities of oxide charges under NBTI stress. Our investigation of recovery and isotope effect shows that both interface-reaction and bulk-reaction, which can be plausible by extrinsic defect, are among the origins of NBTI degradation in ultra-thin gate oxide.

KW - Deuterium

KW - Hydrogen

KW - Negative-bias-temperature instability

KW - Oxide trap

UR - http://www.scopus.com/inward/record.url?scp=3042658178&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042658178&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:3042658178

SP - 685

EP - 686

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

SN - 0099-9512

ER -