Abstract
This paper presents an extended model for the negative-bias temperature instability in p-MOSFET's with 3 nm gate oxide film. The devices, annealed with a standard forming gas (FG) process, have been subjected to an additional annealing process under high pressure, using both hydrogen and deuterium. We found that NBTI was accelerated by the high-pressure hydrogen (or deuterium) annealing compared to the standard FG annealing. This is attributed to the higher hydrogen (deuterium) density, and that in turn causes higher densities of oxide charges under NBTI stress. Our investigation of recovery and isotope effect shows that both interface-reaction and bulk-reaction, which can be plausible by extrinsic defect, are among the origins of NBTI degradation in ultrathin gate oxide.
Original language | English (US) |
---|---|
Article number | 1315451 |
Pages (from-to) | 685-686 |
Number of pages | 2 |
Journal | IEEE International Reliability Physics Symposium Proceedings |
Volume | 2004-January |
Issue number | January |
DOIs | |
State | Published - 2004 |
Event | 42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States Duration: Apr 25 2004 → Apr 29 2004 |
Keywords
- Deuterium
- Hydrogen
- Negative-bias-temperature instability
- Oxide trap
ASJC Scopus subject areas
- General Engineering