Hydrogen-related extrinsic oxide trap generation in thin gate oxide film during negative-bias temperature instability stress

Jae Sung Lee, Joseph W Lyding, Karl Hess

Research output: Contribution to journalConference article

Abstract

This paper presents an extended model for the negative-bias temperature instability in p-MOSFET's with 3 nm gate oxide film. The devices, annealed with a standard forming gas (FG) process, have been subjected to an additional annealing process under high pressure, using both hydrogen and deuterium. We found that NBTI was accelerated by the high-pressure hydrogen (or deuterium) annealing compared to the standard FG annealing. This is attributed to the higher hydrogen (deuterium) density, and that in turn causes higher densities of oxide charges under NBTI stress. Our investigation of recovery and isotope effect shows that both interface-reaction and bulk-reaction, which can be plausible by extrinsic defect, are among the origins of NBTI degradation in ultrathin gate oxide.

Original languageEnglish (US)
Article number1315451
Pages (from-to)685-686
Number of pages2
JournalIEEE International Reliability Physics Symposium Proceedings
Volume2004-January
Issue numberJanuary
DOIs
StatePublished - Jan 1 2004
Event42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States
Duration: Apr 25 2004Apr 29 2004

Fingerprint

Oxide films
Deuterium
Hydrogen
Oxides
Annealing
Gases
Isotopes
Recovery
Degradation
Defects
Negative bias temperature instability

Keywords

  • Deuterium
  • Hydrogen
  • Negative-bias-temperature instability
  • Oxide trap

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hydrogen-related extrinsic oxide trap generation in thin gate oxide film during negative-bias temperature instability stress. / Lee, Jae Sung; Lyding, Joseph W; Hess, Karl.

In: IEEE International Reliability Physics Symposium Proceedings, Vol. 2004-January, No. January, 1315451, 01.01.2004, p. 685-686.

Research output: Contribution to journalConference article

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AB - This paper presents an extended model for the negative-bias temperature instability in p-MOSFET's with 3 nm gate oxide film. The devices, annealed with a standard forming gas (FG) process, have been subjected to an additional annealing process under high pressure, using both hydrogen and deuterium. We found that NBTI was accelerated by the high-pressure hydrogen (or deuterium) annealing compared to the standard FG annealing. This is attributed to the higher hydrogen (deuterium) density, and that in turn causes higher densities of oxide charges under NBTI stress. Our investigation of recovery and isotope effect shows that both interface-reaction and bulk-reaction, which can be plausible by extrinsic defect, are among the origins of NBTI degradation in ultrathin gate oxide.

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