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Hydrogen passivation of C acceptors in high-purity GaAs
N. Pan
, S. S. Bose
, M. H. Kim
, G. E. Stillman
, F. Chambers
, G. Devane
, C. R. Ito
,
M. Feng
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peer-review
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Keyphrases
High Purity
100%
Gallium Arsenide
100%
Hydrogenation
100%
Hydrogen Passivation
100%
Molecular Beam Epitaxy
25%
Metal-organic Chemical Vapor Deposition (MOCVD)
25%
Photoluminescence Measurements
25%
P-type
25%
Passivated
25%
Low-temperature Photoluminescence
25%
Hall Effect Measurement
25%
Active C
25%
Photoluminescence Effect
25%
Material Science
Gallium Arsenide
100%
Hydrogenation
100%
Photoluminescence
50%
Molecular Beam Epitaxy
25%
Chemical Vapor Deposition
25%