Abstract
The effects of hydrogenation in high-purity p-type GaAs grown by molecular beam epitaxy and metalorganic chemical vapor deposition have been investigated by low-temperature photoluminescence and Hall-effect measurements. Before hydrogenation, photoluminescence measurements showed the dominant acceptor in the original samples was C, while after hydrogenation, the concentration of electrically active C acceptors was significantly reduced and the samples were highly resistive. These electrical and spectroscopic results show that C acceptors in GaAs can be passivated by hydrogenation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 596-598 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 51 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1987 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)