Hydrogen passivation of C acceptors in high-purity GaAs

N. Pan, S. S. Bose, M. H. Kim, G. E. Stillman, F. Chambers, G. Devane, C. R. Ito, M. Feng

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The effects of hydrogenation in high-purity p-type GaAs grown by molecular beam epitaxy and metalorganic chemical vapor deposition have been investigated by low-temperature photoluminescence and Hall-effect measurements. Before hydrogenation, photoluminescence measurements showed the dominant acceptor in the original samples was C, while after hydrogenation, the concentration of electrically active C acceptors was significantly reduced and the samples were highly resistive. These electrical and spectroscopic results show that C acceptors in GaAs can be passivated by hydrogenation.

Original languageEnglish (US)
Pages (from-to)596-598
Number of pages3
JournalApplied Physics Letters
Issue number8
StatePublished - 1987

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Pan, N., Bose, S. S., Kim, M. H., Stillman, G. E., Chambers, F., Devane, G., Ito, C. R., & Feng, M. (1987). Hydrogen passivation of C acceptors in high-purity GaAs. Applied Physics Letters, 51(8), 596-598. https://doi.org/10.1063/1.98358