Hydrogen passivation of C acceptors in high-purity GaAs

N. Pan, S. S. Bose, M. H. Kim, G. E. Stillman, F. Chambers, G. Devane, C. R. Ito, M. Feng

Research output: Contribution to journalArticlepeer-review


The effects of hydrogenation in high-purity p-type GaAs grown by molecular beam epitaxy and metalorganic chemical vapor deposition have been investigated by low-temperature photoluminescence and Hall-effect measurements. Before hydrogenation, photoluminescence measurements showed the dominant acceptor in the original samples was C, while after hydrogenation, the concentration of electrically active C acceptors was significantly reduced and the samples were highly resistive. These electrical and spectroscopic results show that C acceptors in GaAs can be passivated by hydrogenation.

Original languageEnglish (US)
Pages (from-to)596-598
Number of pages3
JournalApplied Physics Letters
Issue number8
StatePublished - 1987
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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