TY - PAT
T1 - Hydrogen ambient process for low contact resistivity PdGe contacts to III-V materials
AU - Hattendorf, Michael L.
AU - Stillman, Gregory E.
AU - Ahmari, David A.
AU - Lemmerhirt, David F.
N1 - This invention was made with Government support under ARPA Contract No. N66001-96-C-8615 awarded by the Office of Naval Research. The Government has certain rights in the invention.
PY - 2000/8/15
Y1 - 2000/8/15
N2 - The invention uses hydrogen ambient atmosphere to directly form PdGe contacts on Group III-V materials. Specific GaAs HBT's have been formed in a 100' H.sub.2 ambient, and demonstrate low etch reactivity attributable to the significant incorporation of hydrogen. The LP-MOCVD method used to demonstrate the invention produced a specific contact resistivity of less than 1.times.10.sup.-7 .OMEGA.-cm-.sup.-2, at preferred conditions of a 100' hydrogen ambient, 300.degree. C., and 15 minute reaction time. This is believed to be the lowest known resistance of any alloy method employed for PdGe on GaAs. Equally significant, the contacts demonstrate increased durability during etching.
AB - The invention uses hydrogen ambient atmosphere to directly form PdGe contacts on Group III-V materials. Specific GaAs HBT's have been formed in a 100' H.sub.2 ambient, and demonstrate low etch reactivity attributable to the significant incorporation of hydrogen. The LP-MOCVD method used to demonstrate the invention produced a specific contact resistivity of less than 1.times.10.sup.-7 .OMEGA.-cm-.sup.-2, at preferred conditions of a 100' hydrogen ambient, 300.degree. C., and 15 minute reaction time. This is believed to be the lowest known resistance of any alloy method employed for PdGe on GaAs. Equally significant, the contacts demonstrate increased durability during etching.
M3 - Patent
M1 - 6103614
Y2 - 1998/09/02
ER -