The invention uses hydrogen ambient atmosphere to directly form PdGe contacts on Group III-V materials. Specific GaAs HBT's have been formed in a 100' H.sub.2 ambient, and demonstrate low etch reactivity attributable to the significant incorporation of hydrogen. The LP-MOCVD method used to demonstrate the invention produced a specific contact resistivity of less than 1.times.10.sup.-7 .OMEGA.-cm-.sup.-2, at preferred conditions of a 100' hydrogen ambient, 300.degree. C., and 15 minute reaction time. This is believed to be the lowest known resistance of any alloy method employed for PdGe on GaAs. Equally significant, the contacts demonstrate increased durability during etching.
|Original language||English (US)|
|U.S. patent number||6103614|
|State||Published - Aug 15 2000|