Abstract
The use of alternative channel materials such as germanium and strained silicon (ε-Si) is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si 1-xGex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n-MOSFET. In this paper, we demonstrate that ε-Si p-MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p-MOSFETs exhibiting mobility enhancements of 10 times. These p-MOSFETs can be integrated on the same wafers as ε-Si n-MOSFETs, making symmetric-mobility CMOS possible.
Original language | English (US) |
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Pages (from-to) | 21-26 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 768 |
DOIs | |
State | Published - 2003 |
Externally published | Yes |
Event | Integration of Heterogeneous Thin-Film Materials and Devices - San Francisco, CA, United States Duration: Apr 23 2003 → Apr 24 2003 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering