Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

Minjoo L. Lee, Eugene A. Fitzgerald

Research output: Contribution to journalConference articlepeer-review

Abstract

The use of alternative channel materials such as germanium and strained silicon (ε-Si) is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si 1-xGex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n-MOSFET. In this paper, we demonstrate that ε-Si p-MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p-MOSFETs exhibiting mobility enhancements of 10 times. These p-MOSFETs can be integrated on the same wafers as ε-Si n-MOSFETs, making symmetric-mobility CMOS possible.

Original languageEnglish (US)
Pages (from-to)21-26
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume768
DOIs
StatePublished - 2003
Externally publishedYes
EventIntegration of Heterogeneous Thin-Film Materials and Devices - San Francisco, CA, United States
Duration: Apr 23 2003Apr 24 2003

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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