Hybrid plasma-semiconductor electronic and optical devices

Clark J Wagner (Inventor), James Gary Eden (Inventor), Paul A Tchertchian (Inventor)

Research output: Patent


The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices.
Original languageEnglish (US)
U.S. patent number8525276
StatePublished - Sep 3 2013


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