TY - JOUR
T1 - Hybrid integration of photonic crystal membrane lasers via postprocess bonding
AU - Sulkin, J. D.
AU - Choquette, K. D.
N1 - Funding Information:
Manuscript received March 10, 2011; revised March 28, 2011; accepted March 28, 2011. Date of publication April 7, 2011; date of current version May 6, 2011. This material is based upon work supported by the National Science Foundation under Award No. DMI 0328162 and Award No. ECCS 07-25515. Corresponding author: J. D. Sulkin (e-mail: [email protected]).
PY - 2011/6
Y1 - 2011/6
N2 - Photonic crystal (PhC) lasers in InGaAsP membranes are bonded after fabrication to a sapphire substrate. The processed devices are held to the sapphire by van der Waals forces and do not require a high temperature anneal. PhC H2 defect cavity devices are found to lase continuous wave and line defect heterostructure devices lase pulsed, both under optical excitation. Postprocess bonding allows extensive fabrication on the native substrate before being transferred to a new substrate, which may be useful for making more complex nanophotonic devices and/or electrically injected devices.
AB - Photonic crystal (PhC) lasers in InGaAsP membranes are bonded after fabrication to a sapphire substrate. The processed devices are held to the sapphire by van der Waals forces and do not require a high temperature anneal. PhC H2 defect cavity devices are found to lase continuous wave and line defect heterostructure devices lase pulsed, both under optical excitation. Postprocess bonding allows extensive fabrication on the native substrate before being transferred to a new substrate, which may be useful for making more complex nanophotonic devices and/or electrically injected devices.
KW - Photonic crystal lasers
KW - integrated nanophotonic systems
KW - semiconductor lasers
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U2 - 10.1109/JPHOT.2011.2139199
DO - 10.1109/JPHOT.2011.2139199
M3 - Article
AN - SCOPUS:79955855318
SN - 1943-0655
VL - 3
SP - 375
EP - 380
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
IS - 3
M1 - 5742961
ER -