TY - JOUR
T1 - Hybrid Dickson Switched-Capacitor Converter with Wide Conversion Ratio in 65-nm CMOS
AU - Assem, Pourya
AU - Liu, Wen Chuen
AU - Lei, Yutian
AU - Hanumolu, Pavan Kumar
AU - Pilawa-Podgurski, Robert C.N.
N1 - Manuscript received September 29, 2019; revised February 13, 2020 and April 26, 2020; accepted May 12, 2020. Date of publication July 13, 2020; date of current version August 26, 2020. This article was approved by Associate Editor Pietro Andreani. This work was supported in part by Texas Instruments, in part by the Army Research Lab, and in part by Systems On Nanoscale Information fabriCs [SONIC] (Semiconductor Research Corporation [SRC] Semiconductor Technology Advanced Research Network [STARnet], sponsored by Microelectronic Advanced Research Corporation [MARCO] and Defense Advanced Research Projects Agency [DARPA]). (Corresponding author: Robert C. N. Pilawa-Podgurski.) Pourya Assem, Wen-Chuen Liu, and Robert C. N. Pilawa-Podgurski are with the Department of Electrical Engineering and Computer Engineering, University of California at Berkeley, Berkeley, CA 94720 USA (e-mail: [email protected]). Yutian Lei is with Tesla, Inc., Palo Alto, CA 94304 USA.
PY - 2020/9
Y1 - 2020/9
N2 - Hybrid switched-capacitor (SC) converters have shown great promise in achieving high efficiency and power density for dc-dc conversion. By combining an SC stage with an inductor filter stage, benefits from both approaches can be realized. In this work, a hybrid Dickson SC converter with a 4:1 native conversion ratio and regulated output voltage range of 0.3-0.9 V from a 3.4 to 4.2-V lithium-ion battery and the effective switching frequency of 1 MHz was implemented in 65-nm bulk CMOS process. The converter achieves maximum output current of 1.5 A, the power density of 330 mW/mm2, and a peak efficiency of 92.6%. The converter is packaged using flip-chip technology with passive devices co-packaged through a high-density interposer to minimize the packaging parasitics and volume. A segmented gate driver is used to enhance the converter efficiency and reliability by maintaining low-voltage ringing across the power switches. The converter is integrated with closed-loop output voltage regulation, dead-time control, and active capacitor-voltage balancing to maximize the active and passive device utilizations.
AB - Hybrid switched-capacitor (SC) converters have shown great promise in achieving high efficiency and power density for dc-dc conversion. By combining an SC stage with an inductor filter stage, benefits from both approaches can be realized. In this work, a hybrid Dickson SC converter with a 4:1 native conversion ratio and regulated output voltage range of 0.3-0.9 V from a 3.4 to 4.2-V lithium-ion battery and the effective switching frequency of 1 MHz was implemented in 65-nm bulk CMOS process. The converter achieves maximum output current of 1.5 A, the power density of 330 mW/mm2, and a peak efficiency of 92.6%. The converter is packaged using flip-chip technology with passive devices co-packaged through a high-density interposer to minimize the packaging parasitics and volume. A segmented gate driver is used to enhance the converter efficiency and reliability by maintaining low-voltage ringing across the power switches. The converter is integrated with closed-loop output voltage regulation, dead-time control, and active capacitor-voltage balancing to maximize the active and passive device utilizations.
KW - Active balancing
KW - Dickson
KW - battery powered
KW - dc-dc converter
KW - dead-time control
KW - flip-chip (FC)
KW - gate driver
KW - high conversion ratio
KW - high efficiency
KW - high power density
KW - hybrid converter
KW - soft-charging
KW - split-phase
KW - switched capacitor (SC)
UR - https://www.scopus.com/pages/publications/85089383358
UR - https://www.scopus.com/inward/citedby.url?scp=85089383358&partnerID=8YFLogxK
U2 - 10.1109/JSSC.2020.3004256
DO - 10.1109/JSSC.2020.3004256
M3 - Article
AN - SCOPUS:85089383358
SN - 0018-9200
VL - 55
SP - 2513
EP - 2528
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
IS - 9
M1 - 9139315
ER -