Hot spotting and second breakdown effects on reverse I-V characteristics for mono-crystalline Si Photovoltaics

Katherine A. Kim, Philip T. Krein

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Hot spots are a common problem in photovoltaic (PV) panels that accelerate cell degradation and reduce system performance. Hot spots occur when a cell is reversed biased, sinks power, and heats the cell. At a certain threshold, the PV p-n junction goes into second breakdown and heats a small portion of the cell to very high temperatures. This study experimentally tests mono-crystalline Si cells as they hot spot at different power levels. Heating effects on the I-V characteristics during hot spotting and permanent changes after seven days of hour-long hot spot tests are observed and analyzed. I-V characteristics are significantly affected under second breakdown, which is observed when cells are reverse-biased above two times the rated maximum power level.

Original languageEnglish (US)
Title of host publication2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013
Pages1007-1014
Number of pages8
DOIs
StatePublished - 2013
Event5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013 - Denver, CO, United States
Duration: Sep 15 2013Sep 19 2013

Publication series

Name2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013

Other

Other5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013
Country/TerritoryUnited States
CityDenver, CO
Period9/15/139/19/13

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Fuel Technology

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