Hot spot detection for indecomposable self-aligned double patterning layout

Hongbo Zhang, Yuelin Du, Martin D F Wong, Rasit O. Topaloglu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Self-aligned double patterning (SADP) lithography is a novel lithography technology which has the capability to define critical dimension (CD) using one single exposure, therefore holding a great opportunity for the next generation lithography process for the overlay mitigation. However, a necessary design manufacturing co-optimization step - the non-decomposability position detection (hot spot detection) - is still immature. In this paper, targeting the hot spot detection difficulties in SADP process, we first revisit out previous ILP-based SADP decomposition algorithm and provide an extended ILP-based hot spot detection without any preconditions on the design. Then, with some simple requirement that is commonly seen in 2D random layout, we further provided a graph based hot spot detection for an efficient hot spot detection. From the Nangate standard cell library, our experiment validates the hot spot detection process and demonstrates an SADP friendly design tyle is necessary for the upcoming 14nm technology node.

Original languageEnglish (US)
Title of host publicationPhotomask Technology 2011
DOIs
StatePublished - Nov 23 2011
EventPhotomask Technology 2011 - Monterey, CA, United States
Duration: Sep 19 2011Sep 22 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8166
ISSN (Print)0277-786X

Other

OtherPhotomask Technology 2011
CountryUnited States
CityMonterey, CA
Period9/19/119/22/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Zhang, H., Du, Y., Wong, M. D. F., & Topaloglu, R. O. (2011). Hot spot detection for indecomposable self-aligned double patterning layout. In Photomask Technology 2011 [81663E] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8166). https://doi.org/10.1117/12.896990