Self-aligned double patterning (SADP) lithography is a novel lithography technology which has the capability to define critical dimension (CD) using one single exposure, therefore holding a great opportunity for the next generation lithography process for the overlay mitigation. However, a necessary design manufacturing co-optimization step - the non-decomposability position detection (hot spot detection) - is still immature. In this paper, targeting the hot spot detection difficulties in SADP process, we first revisit out previous ILP-based SADP decomposition algorithm and provide an extended ILP-based hot spot detection without any preconditions on the design. Then, with some simple requirement that is commonly seen in 2D random layout, we further provided a graph based hot spot detection for an efficient hot spot detection. From the Nangate standard cell library, our experiment validates the hot spot detection process and demonstrates an SADP friendly design tyle is necessary for the upcoming 14nm technology node.