Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors

K. Y.Donald Cheng; C. C. Liao; H. Xu; K. Y.Norman Cheng; M. Feng

doi:10.1063/1.3599582

Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors

K. Y.Donald Cheng, C. C. Liao, H. Xu, K. Y.Norman Cheng, M. Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A type-I/II double heterojunction bipolar transistor (DHBT) with a layer structure of AlInP(emitter)/GaAsSb(composition graded base)/InP(collector) was designed and grown by molecular beam epitaxy technique. The band alignment of the type-I AlInP/GaAsSb emitter-base interface provides hot electron injection into the base to enhance the effective base velocity to 2.54× 10 ⁷cm/s, resulting in an improved device gain and high frequency performance. We have fabricated a submicron emitter (A_E =0.35×4 μ m²) type-I/II DHBT with a demonstrated current gain of β=50 and a breakdown voltage of BVCEO =4.2 V, with a cutoff frequency of f_T =455 GHz and fMAX =400 GHz at a collector current density, J _C =10 mA/μ m².

Original language	English (US)
Article number	242103
Journal	Applied Physics Letters
Volume	98
Issue number	24
DOIs	https://doi.org/10.1063/1.3599582
State	Published - Jun 13 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3599582

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title = "Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors",

abstract = "A type-I/II double heterojunction bipolar transistor (DHBT) with a layer structure of AlInP(emitter)/GaAsSb(composition graded base)/InP(collector) was designed and grown by molecular beam epitaxy technique. The band alignment of the type-I AlInP/GaAsSb emitter-base interface provides hot electron injection into the base to enhance the effective base velocity to 2.54× 10 7cm/s, resulting in an improved device gain and high frequency performance. We have fabricated a submicron emitter (AE =0.35×4 μ m2) type-I/II DHBT with a demonstrated current gain of β=50 and a breakdown voltage of BVCEO =4.2 V, with a cutoff frequency of fT =455 GHz and fMAX =400 GHz at a collector current density, J C =10 mA/μ m2.",

author = "Cheng, {K. Y.Donald} and Liao, {C. C.} and H. Xu and Cheng, {K. Y.Norman} and M. Feng",

note = "Funding Information: M. Feng is grateful for the support of the Nick Holonyak, Jr. Chair Professorship of Electrical and Computer Engineering. The authors would like to give thanks for the funding support from the DARPA-TFAST program, DARPA-UPI program and BAE Systems as well as for the gift funds provided by Intel and Tektronix.",

year = "2011",

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doi = "10.1063/1.3599582",

language = "English (US)",

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AU - Cheng, K. Y.Donald

AU - Liao, C. C.

AU - Xu, H.

AU - Cheng, K. Y.Norman

AU - Feng, M.

N1 - Funding Information: M. Feng is grateful for the support of the Nick Holonyak, Jr. Chair Professorship of Electrical and Computer Engineering. The authors would like to give thanks for the funding support from the DARPA-TFAST program, DARPA-UPI program and BAE Systems as well as for the gift funds provided by Intel and Tektronix.

PY - 2011/6/13

Y1 - 2011/6/13

N2 - A type-I/II double heterojunction bipolar transistor (DHBT) with a layer structure of AlInP(emitter)/GaAsSb(composition graded base)/InP(collector) was designed and grown by molecular beam epitaxy technique. The band alignment of the type-I AlInP/GaAsSb emitter-base interface provides hot electron injection into the base to enhance the effective base velocity to 2.54× 10 7cm/s, resulting in an improved device gain and high frequency performance. We have fabricated a submicron emitter (AE =0.35×4 μ m2) type-I/II DHBT with a demonstrated current gain of β=50 and a breakdown voltage of BVCEO =4.2 V, with a cutoff frequency of fT =455 GHz and fMAX =400 GHz at a collector current density, J C =10 mA/μ m2.

AB - A type-I/II double heterojunction bipolar transistor (DHBT) with a layer structure of AlInP(emitter)/GaAsSb(composition graded base)/InP(collector) was designed and grown by molecular beam epitaxy technique. The band alignment of the type-I AlInP/GaAsSb emitter-base interface provides hot electron injection into the base to enhance the effective base velocity to 2.54× 10 7cm/s, resulting in an improved device gain and high frequency performance. We have fabricated a submicron emitter (AE =0.35×4 μ m2) type-I/II DHBT with a demonstrated current gain of β=50 and a breakdown voltage of BVCEO =4.2 V, with a cutoff frequency of fT =455 GHz and fMAX =400 GHz at a collector current density, J C =10 mA/μ m2.

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Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors

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