A type-I/II double heterojunction bipolar transistor (DHBT) with a layer structure of AlInP(emitter)/GaAsSb(composition graded base)/InP(collector) was designed and grown by molecular beam epitaxy technique. The band alignment of the type-I AlInP/GaAsSb emitter-base interface provides hot electron injection into the base to enhance the effective base velocity to 2.54× 10 7cm/s, resulting in an improved device gain and high frequency performance. We have fabricated a submicron emitter (AE =0.35×4 μ m2) type-I/II DHBT with a demonstrated current gain of β=50 and a breakdown voltage of BVCEO =4.2 V, with a cutoff frequency of fT =455 GHz and fMAX =400 GHz at a collector current density, J C =10 mA/μ m2.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Jun 13 2011|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)