Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors

K. Y.Donald Cheng, C. C. Liao, H. Xu, K. Y.Norman Cheng, M. Feng

Research output: Contribution to journalArticlepeer-review

Abstract

A type-I/II double heterojunction bipolar transistor (DHBT) with a layer structure of AlInP(emitter)/GaAsSb(composition graded base)/InP(collector) was designed and grown by molecular beam epitaxy technique. The band alignment of the type-I AlInP/GaAsSb emitter-base interface provides hot electron injection into the base to enhance the effective base velocity to 2.54× 10 7cm/s, resulting in an improved device gain and high frequency performance. We have fabricated a submicron emitter (AE =0.35×4 μ m2) type-I/II DHBT with a demonstrated current gain of β=50 and a breakdown voltage of BVCEO =4.2 V, with a cutoff frequency of fT =455 GHz and fMAX =400 GHz at a collector current density, J C =10 mA/μ m2.

Original languageEnglish (US)
Article number242103
JournalApplied Physics Letters
Volume98
Issue number24
DOIs
StatePublished - Jun 13 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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