Hot-carrier stress effects on gate-induced-drain leakage current in n-channel MOSFETs studied by hydrogen/deuterium isotope effect

Keyphrases

• Stress Effect 100%
• Deuterium Isotope Effect 100%
• N-channel MOSFET 100%
• Hot Carrier Stress 100%
• Drain Leakage Current 100%
• Gate-induced Drain Leakage 100%
• Deuterium 66%
• Interface Trap Generation 66%
• Annealing 33%
• Tunneling Current 33%
• Leakage Current 33%
• Low Electric Field 33%
• High Electric Field 33%
• Charge Trapping 33%
• Current Stress 33%
• Interface Traps 33%
• Hole Trapping 33%
• Stress Conditions 33%
• Passivation 33%
• Band-to-band Tunneling 33%
• Substrate Current 33%
• Measurement Condition 33%
• Oxide Charge 33%
• Current Component 33%
• Trap-assisted 33%
• H-D Isotope Effect 33%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Gate Induced Drain Leakage 100%
• Interface Trap 100%
• Tunnel Construction 33%
• Passivation 33%
• High Electric Field 33%
• Stress Condition 33%
• Measurement Condition 33%
• Electric Field 33%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Deuterium 100%
• Hot Carrier 100%
• Oxide Compound 33%
• Charge Trapping 33%