The degradation of gate-induced-drain leakage (GIDL) current under hot-carrier stress (HCS) has been studied in n-channel MOSFETs that were annealed in hydrogen (H) or deuterium (D). It is found that the degradation of GIDL current (IGIDL) can be effectively suppressed by deuterium passivation of interface traps. By using the H/D isotope effect, the impacts of oxide charge trapping (ΔNox) and interface trap generation (ΔNit) on IGIDL are successfully separated. The results indicate that, depending on stress and measurement conditions, IGIDL may increase or decrease under HCS, ΔNox alters IGIDL at high electric fields by varying the band-to-band tunneling current. ΔNit alters IGIDL at a low electric field by introducing a trap-assisted leakage current component. Furthermore, evidence of hole trapping at the peak substrate current stress is indisputably presented for the first time and its impact on IGIDL is discussed.
- Charge trapping
- Hot carrier
- Hydrogen/deuterium isotope effect
- Interface traps
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering