Hot-carrier stress effects on gate-induced-drain leakage current in n-channel MOSFETs studied by hydrogen/deuterium isotope effect

Kangguo Cheng, Joseph W Lyding

Research output: Contribution to journalLetter

Abstract

The degradation of gate-induced-drain leakage (GIDL) current under hot-carrier stress (HCS) has been studied in n-channel MOSFETs that were annealed in hydrogen (H) or deuterium (D). It is found that the degradation of GIDL current (IGIDL) can be effectively suppressed by deuterium passivation of interface traps. By using the H/D isotope effect, the impacts of oxide charge trapping (ΔNox) and interface trap generation (ΔNit) on IGIDL are successfully separated. The results indicate that, depending on stress and measurement conditions, IGIDL may increase or decrease under HCS, ΔNox alters IGIDL at high electric fields by varying the band-to-band tunneling current. ΔNit alters IGIDL at a low electric field by introducing a trap-assisted leakage current component. Furthermore, evidence of hole trapping at the peak substrate current stress is indisputably presented for the first time and its impact on IGIDL is discussed.

Original languageEnglish (US)
Pages (from-to)487-489
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number7
DOIs
StatePublished - Jul 1 2003

Fingerprint

Hot carriers
Deuterium
Isotopes
Leakage currents
Hydrogen
Electric fields
Degradation
Charge trapping
Passivation
Oxides
Substrates

Keywords

  • Charge trapping
  • GIDL
  • Hot carrier
  • Hydrogen/deuterium isotope effect
  • Interface traps
  • MOSFETs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{d0575e02dbae4b00a7d6b54358c4899e,
title = "Hot-carrier stress effects on gate-induced-drain leakage current in n-channel MOSFETs studied by hydrogen/deuterium isotope effect",
abstract = "The degradation of gate-induced-drain leakage (GIDL) current under hot-carrier stress (HCS) has been studied in n-channel MOSFETs that were annealed in hydrogen (H) or deuterium (D). It is found that the degradation of GIDL current (IGIDL) can be effectively suppressed by deuterium passivation of interface traps. By using the H/D isotope effect, the impacts of oxide charge trapping (ΔNox) and interface trap generation (ΔNit) on IGIDL are successfully separated. The results indicate that, depending on stress and measurement conditions, IGIDL may increase or decrease under HCS, ΔNox alters IGIDL at high electric fields by varying the band-to-band tunneling current. ΔNit alters IGIDL at a low electric field by introducing a trap-assisted leakage current component. Furthermore, evidence of hole trapping at the peak substrate current stress is indisputably presented for the first time and its impact on IGIDL is discussed.",
keywords = "Charge trapping, GIDL, Hot carrier, Hydrogen/deuterium isotope effect, Interface traps, MOSFETs",
author = "Kangguo Cheng and Lyding, {Joseph W}",
year = "2003",
month = "7",
day = "1",
doi = "10.1109/LED.2003.815003",
language = "English (US)",
volume = "24",
pages = "487--489",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

TY - JOUR

T1 - Hot-carrier stress effects on gate-induced-drain leakage current in n-channel MOSFETs studied by hydrogen/deuterium isotope effect

AU - Cheng, Kangguo

AU - Lyding, Joseph W

PY - 2003/7/1

Y1 - 2003/7/1

N2 - The degradation of gate-induced-drain leakage (GIDL) current under hot-carrier stress (HCS) has been studied in n-channel MOSFETs that were annealed in hydrogen (H) or deuterium (D). It is found that the degradation of GIDL current (IGIDL) can be effectively suppressed by deuterium passivation of interface traps. By using the H/D isotope effect, the impacts of oxide charge trapping (ΔNox) and interface trap generation (ΔNit) on IGIDL are successfully separated. The results indicate that, depending on stress and measurement conditions, IGIDL may increase or decrease under HCS, ΔNox alters IGIDL at high electric fields by varying the band-to-band tunneling current. ΔNit alters IGIDL at a low electric field by introducing a trap-assisted leakage current component. Furthermore, evidence of hole trapping at the peak substrate current stress is indisputably presented for the first time and its impact on IGIDL is discussed.

AB - The degradation of gate-induced-drain leakage (GIDL) current under hot-carrier stress (HCS) has been studied in n-channel MOSFETs that were annealed in hydrogen (H) or deuterium (D). It is found that the degradation of GIDL current (IGIDL) can be effectively suppressed by deuterium passivation of interface traps. By using the H/D isotope effect, the impacts of oxide charge trapping (ΔNox) and interface trap generation (ΔNit) on IGIDL are successfully separated. The results indicate that, depending on stress and measurement conditions, IGIDL may increase or decrease under HCS, ΔNox alters IGIDL at high electric fields by varying the band-to-band tunneling current. ΔNit alters IGIDL at a low electric field by introducing a trap-assisted leakage current component. Furthermore, evidence of hole trapping at the peak substrate current stress is indisputably presented for the first time and its impact on IGIDL is discussed.

KW - Charge trapping

KW - GIDL

KW - Hot carrier

KW - Hydrogen/deuterium isotope effect

KW - Interface traps

KW - MOSFETs

UR - http://www.scopus.com/inward/record.url?scp=0042888788&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042888788&partnerID=8YFLogxK

U2 - 10.1109/LED.2003.815003

DO - 10.1109/LED.2003.815003

M3 - Letter

AN - SCOPUS:0042888788

VL - 24

SP - 487

EP - 489

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

ER -