Abstract
Lifetime testing of NMOSFETs and PMOSFETs shows that reliability testing must be carried out at the expected circuit operating temperature rather than at room temperature to avoid overestimating the circuit lifetime. Results also show that at 100 °C, the worst case DC bias condition is Vg = Vd.
Original language | English (US) |
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Pages (from-to) | 103-107 |
Number of pages | 5 |
Journal | Annual Proceedings - Reliability Physics (Symposium) |
State | Published - 2000 |
Event | 38th IEEE International Reliability Physics Symposium - San Jose, CA, USA Duration: Apr 10 2000 → Apr 13 2000 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality