Hot carrier induced degradation in deep submicron MOSFETs at 100 °C

E. Li; Elyse Rosenbaum; L. F. Register; J. Tao; P. Fang

Hot carrier induced degradation in deep submicron MOSFETs at 100 °C

E. Li, Elyse Rosenbaum, L. F. Register, J. Tao, P. Fang

Research output: Contribution to journal › Article › peer-review

Abstract

Lifetime testing of NMOSFETs and PMOSFETs shows that reliability testing must be carried out at the expected circuit operating temperature rather than at room temperature to avoid overestimating the circuit lifetime. Results also show that at 100 °C, the worst case DC bias condition is V_g = V_d.

Original language	English (US)
Pages (from-to)	103-107
Number of pages	5
Journal	Annual Proceedings - Reliability Physics (Symposium)
State	Published - 2000

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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title = "Hot carrier induced degradation in deep submicron MOSFETs at 100 °C",

abstract = "Lifetime testing of NMOSFETs and PMOSFETs shows that reliability testing must be carried out at the expected circuit operating temperature rather than at room temperature to avoid overestimating the circuit lifetime. Results also show that at 100 °C, the worst case DC bias condition is Vg = Vd.",

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AU - Li, E.

AU - Rosenbaum, Elyse

AU - Register, L. F.

AU - Tao, J.

AU - Fang, P.

PY - 2000

Y1 - 2000

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AB - Lifetime testing of NMOSFETs and PMOSFETs shows that reliability testing must be carried out at the expected circuit operating temperature rather than at room temperature to avoid overestimating the circuit lifetime. Results also show that at 100 °C, the worst case DC bias condition is Vg = Vd.

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JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

ER -

Hot carrier induced degradation in deep submicron MOSFETs at 100 °C

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