@inproceedings{010bc69e0d684197a77a3d01cff05a03,
title = "Hot carrier effects in nMOSFETs in 0.1μm CMOS technology",
abstract = "Recent studies show that, for a given technology, as the effective channel length is scaled down towards 0.1 μm, the worst case hot carrier stress condition for nMOSFETs switches from Ib,peak (peak substrate current bias condition) to Vg = Vd. In this paper, we demonstrate that the worst case stress condition is determined by the ratio of qq to qq. Post-metallization anneal in deuterium similarly improves hot carrier lifetime under bias at Ib,peak and Vg = Vd.",
author = "E. Li and E. Rosenbaum and J. Tao and Yeap, {G. C.F.} and Lin, {M. R.} and P. Fang",
year = "1999",
language = "English (US)",
isbn = "0780352203",
series = "Annual Proceedings - Reliability Physics (Symposium)",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "253--258",
booktitle = "Annual Proceedings - Reliability Physics (Symposium)",
address = "United States",
note = "Proceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium ; Conference date: 23-03-1999 Through 25-03-1999",
}