Hole scattering by confined optical phonons in silicon nanowires

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Abstract

The authors provide a theoretical analysis of the influence of confinement on the hole-optical phonon interaction in freestanding Si nanowires. Their model based on deformation potential optical phonons shows that in narrow quantum wires, hole scattering is less frequent than when calculated with a bulk (continuous) phonon spectrum. In addition, scattering by confined optical phonons results in dissimilar rates for backward and forward events, in contrast with continuous phonons.

Original languageEnglish (US)
Article number183505
JournalApplied Physics Letters
Volume90
Issue number18
DOIs
StatePublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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