Hole mobility enhancements in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si1-xGex

Minjoo L. Lee; Eugene A. Fitzgerald

doi:10.1063/1.1590052

Hole mobility enhancements in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si_1-xGe_x

Minjoo L. Lee, Eugene A. Fitzgerald

Research output: Contribution to journal › Article › peer-review

Abstract

The hole mobility enhancement in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si_1-xGe_x was discussed. The low out-of-plane effective mass of holes in strained heterostructures grown on relaxed Si_1-xGe_x causes the hole wave function to spread significantly below the surface. It was showed that hole wave functions with mixed or hybrid character can lead to large p-metal oxide semiconductors (MOS) mobility enhancements.

Original language	English (US)
Pages (from-to)	2590-2596
Number of pages	7
Journal	Journal of Applied Physics
Volume	94
Issue number	4
DOIs	https://doi.org/10.1063/1.1590052
State	Published - Aug 15 2003
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

Online availability

10.1063/1.1590052

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abstract = "The hole mobility enhancement in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si1-xGex was discussed. The low out-of-plane effective mass of holes in strained heterostructures grown on relaxed Si1-xGex causes the hole wave function to spread significantly below the surface. It was showed that hole wave functions with mixed or hybrid character can lead to large p-metal oxide semiconductors (MOS) mobility enhancements.",

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