The hole mobility enhancement in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si1-xGex was discussed. The low out-of-plane effective mass of holes in strained heterostructures grown on relaxed Si1-xGex causes the hole wave function to spread significantly below the surface. It was showed that hole wave functions with mixed or hybrid character can lead to large p-metal oxide semiconductors (MOS) mobility enhancements.
ASJC Scopus subject areas
- General Physics and Astronomy