Hole mobility enhancements in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si1-xGex

Minjoo L. Lee, Eugene A. Fitzgerald

Research output: Contribution to journalArticle

Abstract

The hole mobility enhancement in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si1-xGex was discussed. The low out-of-plane effective mass of holes in strained heterostructures grown on relaxed Si1-xGex causes the hole wave function to spread significantly below the surface. It was showed that hole wave functions with mixed or hybrid character can lead to large p-metal oxide semiconductors (MOS) mobility enhancements.

Original languageEnglish (US)
Pages (from-to)2590-2596
Number of pages7
JournalJournal of Applied Physics
Volume94
Issue number4
DOIs
StatePublished - Aug 15 2003
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this