Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI)

Zhiyuan Cheng, Jongwan Jung, Minjoo L. Lee, Arthur J. Pitera, Judy L. Hoyt, Dimitri A. Antoniadis, Eugene A. Fitzgerald

Research output: Contribution to journalArticlepeer-review

Abstract

Dual-channel heterostructures, with a tensile strained-Si layer (for electron channel) and a compressively strained-Si0.4Ge0.6 layer (for hole channel) on relaxed-Si0.7Ge0.3 -on-insulator (SGOI) substrates were fabricated by bond, etch-back and epitaxial regrowth. Partially depleted p-MOSFETs were made on this strained-Si/strained- SiGe SGOI heterostructure. The hole mobility shows an enhancement of about 1.8 times at 0.2 MV cm-1, equivalent to that obtained on co-processed strained-Si/strained-SiGe p-MOSFETs fabricated on bulk relaxed Si 0.7Ge0.3 virtual substrates. The limited thermal budget issue for this heterostructure is also discussed.

Original languageEnglish (US)
Pages (from-to)L48-L51
JournalSemiconductor Science and Technology
Volume19
Issue number5
DOIs
StatePublished - May 1 2004
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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