TY - JOUR
T1 - Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI)
AU - Cheng, Zhiyuan
AU - Jung, Jongwan
AU - Lee, Minjoo L.
AU - Pitera, Arthur J.
AU - Hoyt, Judy L.
AU - Antoniadis, Dimitri A.
AU - Fitzgerald, Eugene A.
PY - 2004/5
Y1 - 2004/5
N2 - Dual-channel heterostructures, with a tensile strained-Si layer (for electron channel) and a compressively strained-Si0.4Ge0.6 layer (for hole channel) on relaxed-Si0.7Ge0.3 -on-insulator (SGOI) substrates were fabricated by bond, etch-back and epitaxial regrowth. Partially depleted p-MOSFETs were made on this strained-Si/strained- SiGe SGOI heterostructure. The hole mobility shows an enhancement of about 1.8 times at 0.2 MV cm-1, equivalent to that obtained on co-processed strained-Si/strained-SiGe p-MOSFETs fabricated on bulk relaxed Si 0.7Ge0.3 virtual substrates. The limited thermal budget issue for this heterostructure is also discussed.
AB - Dual-channel heterostructures, with a tensile strained-Si layer (for electron channel) and a compressively strained-Si0.4Ge0.6 layer (for hole channel) on relaxed-Si0.7Ge0.3 -on-insulator (SGOI) substrates were fabricated by bond, etch-back and epitaxial regrowth. Partially depleted p-MOSFETs were made on this strained-Si/strained- SiGe SGOI heterostructure. The hole mobility shows an enhancement of about 1.8 times at 0.2 MV cm-1, equivalent to that obtained on co-processed strained-Si/strained-SiGe p-MOSFETs fabricated on bulk relaxed Si 0.7Ge0.3 virtual substrates. The limited thermal budget issue for this heterostructure is also discussed.
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U2 - 10.1088/0268-1242/19/5/L02
DO - 10.1088/0268-1242/19/5/L02
M3 - Article
AN - SCOPUS:1642347099
SN - 0268-1242
VL - 19
SP - L48-L51
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 5
ER -