Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes

R. McClintock; J. L. Pau; K. Minder; C. Bayram; P. Kung; M. Razeghi

doi:10.1063/1.2720712

Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes

R. McClintock, J. L. Pau, K. Minder, C. Bayram, P. Kung, M. Razeghi

Research output: Contribution to journal › Article › peer-review

Abstract

Avalanche p-i-n photodiodes were fabricated on AlN templates for back illumination. Structures with different intrinsic layer thicknesses were tested. A critical electric field of 2.73 MVcm was estimated from the variation of the breakdown voltage with thickness. From the device response under back and front illumination and the consequent selective injection of holes and electrons in the junction, ionization coefficients were obtained for GaN. The hole ionization coefficient was found to be higher than the electron ionization coefficient as predicted by theory. Excess multiplication noise factors were also calculated for back and front illumination, and indicated a higher noise contribution for electron injection.

Original language	English (US)
Article number	141112
Journal	Applied Physics Letters
Volume	90
Issue number	14
DOIs	https://doi.org/10.1063/1.2720712
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2720712

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title = "Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes",

abstract = "Avalanche p-i-n photodiodes were fabricated on AlN templates for back illumination. Structures with different intrinsic layer thicknesses were tested. A critical electric field of 2.73 MVcm was estimated from the variation of the breakdown voltage with thickness. From the device response under back and front illumination and the consequent selective injection of holes and electrons in the junction, ionization coefficients were obtained for GaN. The hole ionization coefficient was found to be higher than the electron ionization coefficient as predicted by theory. Excess multiplication noise factors were also calculated for back and front illumination, and indicated a higher noise contribution for electron injection.",

author = "R. McClintock and Pau, {J. L.} and K. Minder and C. Bayram and P. Kung and M. Razeghi",

note = "Funding Information: The authors acknowledge the Fulbright Association and the Spanish Ministry of Education and Science for supporting one of the authors (J. L. P.), Motorola for supporting another author (K. M.), and the Richter Trust for supporting another author (R. M.). In addition, the authors would like to thank Donald Silversmith of the Air Force Office of Scientific Research for discussions and encouragement.",

year = "2007",

doi = "10.1063/1.2720712",

language = "English (US)",

volume = "90",

journal = "Applied Physics Letters",

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AU - McClintock, R.

AU - Pau, J. L.

AU - Minder, K.

AU - Bayram, C.

AU - Kung, P.

AU - Razeghi, M.

N1 - Funding Information: The authors acknowledge the Fulbright Association and the Spanish Ministry of Education and Science for supporting one of the authors (J. L. P.), Motorola for supporting another author (K. M.), and the Richter Trust for supporting another author (R. M.). In addition, the authors would like to thank Donald Silversmith of the Air Force Office of Scientific Research for discussions and encouragement.

PY - 2007

Y1 - 2007

N2 - Avalanche p-i-n photodiodes were fabricated on AlN templates for back illumination. Structures with different intrinsic layer thicknesses were tested. A critical electric field of 2.73 MVcm was estimated from the variation of the breakdown voltage with thickness. From the device response under back and front illumination and the consequent selective injection of holes and electrons in the junction, ionization coefficients were obtained for GaN. The hole ionization coefficient was found to be higher than the electron ionization coefficient as predicted by theory. Excess multiplication noise factors were also calculated for back and front illumination, and indicated a higher noise contribution for electron injection.

AB - Avalanche p-i-n photodiodes were fabricated on AlN templates for back illumination. Structures with different intrinsic layer thicknesses were tested. A critical electric field of 2.73 MVcm was estimated from the variation of the breakdown voltage with thickness. From the device response under back and front illumination and the consequent selective injection of holes and electrons in the junction, ionization coefficients were obtained for GaN. The hole ionization coefficient was found to be higher than the electron ionization coefficient as predicted by theory. Excess multiplication noise factors were also calculated for back and front illumination, and indicated a higher noise contribution for electron injection.

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Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes

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