Highly uniform and reproducible visible to near-infrared vertical-cavity surface-emitting lasers grown by MOVPE

Hong Q. Hou, Kent D. Choquette, B. E. Hammons, William G. Breiland, Mary Hagerott Crawford, Kevin L. Lear

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the growth and characterization of vertical- cavity surface emitting lasers (VCSELs) from visible to near-infrared wavelength grown by metalorganic vapor phase epitaxy. Discussions on the growth issue of VCSEL materials include the control on growth rate and composition using an in situ normal-incidence reflectometer, optimization of ultra-high material uniformity, and comprehensive p- and n- type doping study in AlGaAs by CCl4 and Si2H6 over the entire Al composition range. We also demonstrate our recent achievements of selectively oxidized VCSELs which include the first room-temperature continues-wave demonstration of all-AlGaAs 700-nm red VCSELs, high- performance n-side up 850-nm VCSELs, and low threshold current and low-threshold voltage 1.06 micrometer VCSELs using InGaAs/GaAsP strain-compensated quantum wells.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsKent D. Choquette, Dennis G. Deppe
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages34-45
Number of pages12
ISBN (Print)0819424145
StatePublished - 1997
Externally publishedYes
EventVertical-Cavity Surface-Emitting Lasers - San Jose, CA, USA
Duration: Feb 13 1997Feb 14 1997

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume3003
ISSN (Print)0277-786X

Other

OtherVertical-Cavity Surface-Emitting Lasers
CitySan Jose, CA, USA
Period2/13/972/14/97

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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