Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry

H. Q. Hou; H. C. Chui; K. D. Choquette; B. E. Hammons; W. G. Breiland; K. M. Geib

doi:10.1109/68.536629

Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry

H. Q. Hou, H. C. Chui, K. D. Choquette, B. E. Hammons, W. G. Breiland, K. M. Geib

Research output: Contribution to journal › Article › peer-review

Abstract

Vertical-cavity surface-emitting lasers (VCSEL's) were grown by metalorganic vapor phase epitaxy. Excellent uniformity of Fabry-Perot cavity wavelength for VCSEL materials of ±0.2% across a 3-in diameter wafer was achieved. This results in excellent uniformity of the lasing wavelength and threshold current of VCSEL devices. Employing pregrowth calibrations on growth rates periodically with an in situ reflectometer, we obtained a run-to-run wavelength reproducibility for 770- and 850-nm VCSEL's of ±0.3% over the course of more than a hundred runs.

Original language	English (US)
Pages (from-to)	1285-1287
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	8
Issue number	10
DOIs	https://doi.org/10.1109/68.536629
State	Published - Oct 1996
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.536629

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title = "Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry",

abstract = "Vertical-cavity surface-emitting lasers (VCSEL's) were grown by metalorganic vapor phase epitaxy. Excellent uniformity of Fabry-Perot cavity wavelength for VCSEL materials of ±0.2% across a 3-in diameter wafer was achieved. This results in excellent uniformity of the lasing wavelength and threshold current of VCSEL devices. Employing pregrowth calibrations on growth rates periodically with an in situ reflectometer, we obtained a run-to-run wavelength reproducibility for 770- and 850-nm VCSEL's of ±0.3% over the course of more than a hundred runs.",

author = "Hou, {H. Q.} and Chui, {H. C.} and Choquette, {K. D.} and Hammons, {B. E.} and Breiland, {W. G.} and Geib, {K. M.}",

note = "Funding Information: Manuscript received May 3, 1996; revised June 11, 1996. This work was supported by the DOE under Contract DE-AC04-94AL85000. H. Q. Hou, K. D. Choquette, B. E. Hammons, W. G. Breiland, and K. M. Geib are with the Sandia National Laboratories, MS 0603, Albuquerque, NM 87185 USA. H. C. Chui is with the Hewlett-Packard Co. 370 W. Trimble Road, San Jose, CA 95131 USA. Publisher Item Identifier S 1041-1 135(96)07430-7.",

year = "1996",

month = oct,

doi = "10.1109/68.536629",

language = "English (US)",

volume = "8",

pages = "1285--1287",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry

AU - Hou, H. Q.

AU - Chui, H. C.

AU - Choquette, K. D.

AU - Hammons, B. E.

AU - Breiland, W. G.

AU - Geib, K. M.

N1 - Funding Information: Manuscript received May 3, 1996; revised June 11, 1996. This work was supported by the DOE under Contract DE-AC04-94AL85000. H. Q. Hou, K. D. Choquette, B. E. Hammons, W. G. Breiland, and K. M. Geib are with the Sandia National Laboratories, MS 0603, Albuquerque, NM 87185 USA. H. C. Chui is with the Hewlett-Packard Co. 370 W. Trimble Road, San Jose, CA 95131 USA. Publisher Item Identifier S 1041-1 135(96)07430-7.

PY - 1996/10

Y1 - 1996/10

N2 - Vertical-cavity surface-emitting lasers (VCSEL's) were grown by metalorganic vapor phase epitaxy. Excellent uniformity of Fabry-Perot cavity wavelength for VCSEL materials of ±0.2% across a 3-in diameter wafer was achieved. This results in excellent uniformity of the lasing wavelength and threshold current of VCSEL devices. Employing pregrowth calibrations on growth rates periodically with an in situ reflectometer, we obtained a run-to-run wavelength reproducibility for 770- and 850-nm VCSEL's of ±0.3% over the course of more than a hundred runs.

AB - Vertical-cavity surface-emitting lasers (VCSEL's) were grown by metalorganic vapor phase epitaxy. Excellent uniformity of Fabry-Perot cavity wavelength for VCSEL materials of ±0.2% across a 3-in diameter wafer was achieved. This results in excellent uniformity of the lasing wavelength and threshold current of VCSEL devices. Employing pregrowth calibrations on growth rates periodically with an in situ reflectometer, we obtained a run-to-run wavelength reproducibility for 770- and 850-nm VCSEL's of ±0.3% over the course of more than a hundred runs.

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Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry

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