Highly selective etching of InGaAd on InAlAs in HBr plasma

I. Adesida; S. Agarwala; C. Caneau; R. Bhat

Highly selective etching of InGaAd on InAlAs in HBr plasma

I. Adesida, S. Agarwala, C. Caneau, R. Bhat

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Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we demonstrate a reactive ion process for the etching of InGaAs on InAlAs with a selectivity of 160. This is the highest selectivity that has ever been reported for this material system.

Original language	English (US)
Title of host publication	1993 IEEE 5th International Conference on Indium Phosphide and Related Materials
Publisher	Publ by IEEE
Pages	529-532
Number of pages	4
ISBN (Print)	0780309944
State	Published - 1993
Event	1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4) - Paris, Fr Duration: Apr 19 1993 → Apr 22 1993

Publication series

Name	1993 IEEE 5th International Conference on Indium Phosphide and Related Materials

Other

Other	1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4)
City	Paris, Fr
Period	4/19/93 → 4/22/93

ASJC Scopus subject areas

General Engineering

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Highly selective etching of InGaAd on InAlAs in HBr plasma. / Adesida, I.; Agarwala, S.; Caneau, C. et al.
1993 IEEE 5th International Conference on Indium Phosphide and Related Materials. Publ by IEEE, 1993. p. 529-532 (1993 IEEE 5th International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Adesida, I, Agarwala, S, Caneau, C & Bhat, R 1993, Highly selective etching of InGaAd on InAlAs in HBr plasma. in 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials. 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials, Publ by IEEE, pp. 529-532, 1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4), Paris, Fr, 4/19/93.

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title = "Highly selective etching of InGaAd on InAlAs in HBr plasma",

abstract = "In this paper, we demonstrate a reactive ion process for the etching of InGaAs on InAlAs with a selectivity of 160. This is the highest selectivity that has ever been reported for this material system.",

author = "I. Adesida and S. Agarwala and C. Caneau and R. Bhat",

year = "1993",

language = "English (US)",

isbn = "0780309944",

series = "1993 IEEE 5th International Conference on Indium Phosphide and Related Materials",

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note = "1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4) ; Conference date: 19-04-1993 Through 22-04-1993",

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T1 - Highly selective etching of InGaAd on InAlAs in HBr plasma

AU - Adesida, I.

AU - Agarwala, S.

AU - Caneau, C.

AU - Bhat, R.

PY - 1993

Y1 - 1993

N2 - In this paper, we demonstrate a reactive ion process for the etching of InGaAs on InAlAs with a selectivity of 160. This is the highest selectivity that has ever been reported for this material system.

AB - In this paper, we demonstrate a reactive ion process for the etching of InGaAs on InAlAs with a selectivity of 160. This is the highest selectivity that has ever been reported for this material system.

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M3 - Conference contribution

AN - SCOPUS:0027307513

SN - 0780309944

T3 - 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials

SP - 529

EP - 532

BT - 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials

PB - Publ by IEEE

T2 - 1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4)

Y2 - 19 April 1993 through 22 April 1993

ER -

Highly selective etching of InGaAd on InAlAs in HBr plasma

Abstract

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Other

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