Highly nonlinear photoluminescence threshold in porous silicon

M. Nayfeh, O. Akcakir, J. Therrien, Z. Yamani, N. Barry, W. Yu, E. Gratton

Research output: Contribution to journalArticlepeer-review


Porous silicon is excited using near-infrared femtosecond pulsed and continuous wave radiation at an average intensity of ∼106 W/cm2 (8×1010 ;W/cm2 peak intensity in pulsed mode). Our results demonstrate the presence of micron-size regions for which the intensity of the photoluminescence has a highly nonlinear threshold, rising by several orders of magnitude near this incident intensity for both the pulsed and continuous wave cases. These results are discussed in terms of stimulated emission from quantum confinement engineered intrinsic Si-Si radiative traps in ultrasmall nanocrystallites, populated following two-photon absorption.

Original languageEnglish (US)
Pages (from-to)4112-4114
Number of pages3
JournalApplied Physics Letters
Issue number26
StatePublished - 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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