Highly nonlinear photoluminescence threshold in porous silicon

M. Nayfeh; O. Akcakir; J. Therrien; Z. Yamani; N. Barry; W. Yu; E. Gratton

doi:10.1063/1.125553

Highly nonlinear photoluminescence threshold in porous silicon

M. Nayfeh, O. Akcakir, J. Therrien, Z. Yamani, N. Barry, W. Yu, E. Gratton

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Porous silicon is excited using near-infrared femtosecond pulsed and continuous wave radiation at an average intensity of ∼10⁶ W/cm² (8×10¹⁰ ;W/cm² peak intensity in pulsed mode). Our results demonstrate the presence of micron-size regions for which the intensity of the photoluminescence has a highly nonlinear threshold, rising by several orders of magnitude near this incident intensity for both the pulsed and continuous wave cases. These results are discussed in terms of stimulated emission from quantum confinement engineered intrinsic Si-Si radiative traps in ultrasmall nanocrystallites, populated following two-photon absorption.

Original language	English (US)
Pages (from-to)	4112-4114
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	26
DOIs	https://doi.org/10.1063/1.125553
State	Published - 1999

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Physics and Astronomy (miscellaneous)

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10.1063/1.125553

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abstract = "Porous silicon is excited using near-infrared femtosecond pulsed and continuous wave radiation at an average intensity of ∼106 W/cm2 (8×1010 ;W/cm2 peak intensity in pulsed mode). Our results demonstrate the presence of micron-size regions for which the intensity of the photoluminescence has a highly nonlinear threshold, rising by several orders of magnitude near this incident intensity for both the pulsed and continuous wave cases. These results are discussed in terms of stimulated emission from quantum confinement engineered intrinsic Si-Si radiative traps in ultrasmall nanocrystallites, populated following two-photon absorption.",

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T1 - Highly nonlinear photoluminescence threshold in porous silicon

AU - Nayfeh, M.

AU - Akcakir, O.

AU - Therrien, J.

AU - Yamani, Z.

AU - Barry, N.

AU - Yu, W.

AU - Gratton, E.

PY - 1999

Y1 - 1999

N2 - Porous silicon is excited using near-infrared femtosecond pulsed and continuous wave radiation at an average intensity of ∼106 W/cm2 (8×1010 ;W/cm2 peak intensity in pulsed mode). Our results demonstrate the presence of micron-size regions for which the intensity of the photoluminescence has a highly nonlinear threshold, rising by several orders of magnitude near this incident intensity for both the pulsed and continuous wave cases. These results are discussed in terms of stimulated emission from quantum confinement engineered intrinsic Si-Si radiative traps in ultrasmall nanocrystallites, populated following two-photon absorption.

AB - Porous silicon is excited using near-infrared femtosecond pulsed and continuous wave radiation at an average intensity of ∼106 W/cm2 (8×1010 ;W/cm2 peak intensity in pulsed mode). Our results demonstrate the presence of micron-size regions for which the intensity of the photoluminescence has a highly nonlinear threshold, rising by several orders of magnitude near this incident intensity for both the pulsed and continuous wave cases. These results are discussed in terms of stimulated emission from quantum confinement engineered intrinsic Si-Si radiative traps in ultrasmall nanocrystallites, populated following two-photon absorption.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

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Highly nonlinear photoluminescence threshold in porous silicon

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