Highly durable SiC nMISFET's at 450 °C

Wenjuan Zhu, X. W. Wang, T. P. Ma, Jesse B. Tucker, Mulpuri V. Rao

Research output: Contribution to journalArticle

Abstract

Enhancement-mode nMISFET's fabricated on 6H-SiC substrates exhibit remarkable reliability and durability at high temperatures. These devices incorporate ONO (oxide-nitride-oxide) gate dielectrics made by the JVD (Jet-Vapor Deposition) method. Projected operating lifetimes of over 200 years under an oxide field of 3 MV/cm, and over 10 years under a field of 3.6 MV/cm, have been demonstrated at 450 °C. These values are believed to far exceed the best data reported to date.

Original languageEnglish (US)
JournalMaterials Science Forum
Volume338
StatePublished - 2000
Externally publishedYes

Fingerprint

Oxides
oxides
Vapor deposition
Gate dielectrics
durability
Nitrides
nitrides
Durability
vapor deposition
life (durability)
augmentation
Substrates
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Zhu, W., Wang, X. W., Ma, T. P., Tucker, J. B., & Rao, M. V. (2000). Highly durable SiC nMISFET's at 450 °C. Materials Science Forum, 338.

Highly durable SiC nMISFET's at 450 °C. / Zhu, Wenjuan; Wang, X. W.; Ma, T. P.; Tucker, Jesse B.; Rao, Mulpuri V.

In: Materials Science Forum, Vol. 338, 2000.

Research output: Contribution to journalArticle

Zhu, W, Wang, XW, Ma, TP, Tucker, JB & Rao, MV 2000, 'Highly durable SiC nMISFET's at 450 °C', Materials Science Forum, vol. 338.
Zhu W, Wang XW, Ma TP, Tucker JB, Rao MV. Highly durable SiC nMISFET's at 450 °C. Materials Science Forum. 2000;338.
Zhu, Wenjuan ; Wang, X. W. ; Ma, T. P. ; Tucker, Jesse B. ; Rao, Mulpuri V. / Highly durable SiC nMISFET's at 450 °C. In: Materials Science Forum. 2000 ; Vol. 338.
@article{80d02198ee564c7fb72f57fd49ac5f98,
title = "Highly durable SiC nMISFET's at 450 °C",
abstract = "Enhancement-mode nMISFET's fabricated on 6H-SiC substrates exhibit remarkable reliability and durability at high temperatures. These devices incorporate ONO (oxide-nitride-oxide) gate dielectrics made by the JVD (Jet-Vapor Deposition) method. Projected operating lifetimes of over 200 years under an oxide field of 3 MV/cm, and over 10 years under a field of 3.6 MV/cm, have been demonstrated at 450 °C. These values are believed to far exceed the best data reported to date.",
author = "Wenjuan Zhu and Wang, {X. W.} and Ma, {T. P.} and Tucker, {Jesse B.} and Rao, {Mulpuri V.}",
year = "2000",
language = "English (US)",
volume = "338",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Highly durable SiC nMISFET's at 450 °C

AU - Zhu, Wenjuan

AU - Wang, X. W.

AU - Ma, T. P.

AU - Tucker, Jesse B.

AU - Rao, Mulpuri V.

PY - 2000

Y1 - 2000

N2 - Enhancement-mode nMISFET's fabricated on 6H-SiC substrates exhibit remarkable reliability and durability at high temperatures. These devices incorporate ONO (oxide-nitride-oxide) gate dielectrics made by the JVD (Jet-Vapor Deposition) method. Projected operating lifetimes of over 200 years under an oxide field of 3 MV/cm, and over 10 years under a field of 3.6 MV/cm, have been demonstrated at 450 °C. These values are believed to far exceed the best data reported to date.

AB - Enhancement-mode nMISFET's fabricated on 6H-SiC substrates exhibit remarkable reliability and durability at high temperatures. These devices incorporate ONO (oxide-nitride-oxide) gate dielectrics made by the JVD (Jet-Vapor Deposition) method. Projected operating lifetimes of over 200 years under an oxide field of 3 MV/cm, and over 10 years under a field of 3.6 MV/cm, have been demonstrated at 450 °C. These values are believed to far exceed the best data reported to date.

UR - http://www.scopus.com/inward/record.url?scp=0343006652&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343006652&partnerID=8YFLogxK

M3 - Article

VL - 338

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

ER -