Highly durable SiC nMISFET's at 450 °C

W. J. Zhu, X. W. Wang, T. P. Ma, Jesse B. Tucker, Mulpuri V. Rao

Research output: Contribution to journalConference article

Abstract

Enhancement-mode nMISFET's fabricated on 6H-SiC substrates exhibit remarkable reliability and durability at high temperatures. These devices incorporate ONO (oxide-nitride-oxide) gate dielectrics made by the JVD (Jet-Vapor Deposition) method. Projected operating lifetimes of over 200 years under an oxide field of 3 MV/cm, and over 10 years under a field of 3.6 MV/cm, have been demonstrated at 450 °C. These values are believed to far exceed the best data reported to date.

Original languageEnglish (US)
Pages (from-to)II/-
JournalMaterials Science Forum
Volume338
StatePublished - Jan 1 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Zhu, W. J., Wang, X. W., Ma, T. P., Tucker, J. B., & Rao, M. V. (2000). Highly durable SiC nMISFET's at 450 °C. Materials Science Forum, 338, II/-.