Highly durable SiC nMISFET's at 450 °C

W. J. Zhu; X. W. Wang; T. P. Ma; Jesse B. Tucker; Mulpuri V. Rao

Highly durable SiC nMISFET's at 450 °C

W. J. Zhu, X. W. Wang, T. P. Ma, Jesse B. Tucker, Mulpuri V. Rao

Research output: Contribution to journal › Conference article › peer-review

Abstract

Enhancement-mode nMISFET's fabricated on 6H-SiC substrates exhibit remarkable reliability and durability at high temperatures. These devices incorporate ONO (oxide-nitride-oxide) gate dielectrics made by the JVD (Jet-Vapor Deposition) method. Projected operating lifetimes of over 200 years under an oxide field of 3 MV/cm, and over 10 years under a field of 3.6 MV/cm, have been demonstrated at 450 °C. These values are believed to far exceed the best data reported to date.

Original language	English (US)
Pages (from-to)	II/-
Journal	Materials Science Forum
Volume	338
State	Published - 2000
Externally published	Yes
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Highly durable SiC nMISFET's at 450 °C",

abstract = "Enhancement-mode nMISFET's fabricated on 6H-SiC substrates exhibit remarkable reliability and durability at high temperatures. These devices incorporate ONO (oxide-nitride-oxide) gate dielectrics made by the JVD (Jet-Vapor Deposition) method. Projected operating lifetimes of over 200 years under an oxide field of 3 MV/cm, and over 10 years under a field of 3.6 MV/cm, have been demonstrated at 450 °C. These values are believed to far exceed the best data reported to date.",

author = "Zhu, {W. J.} and Wang, {X. W.} and Ma, {T. P.} and Tucker, {Jesse B.} and Rao, {Mulpuri V.}",

year = "2000",

language = "English (US)",

volume = "338",

pages = "II/--",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

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TY - JOUR

T1 - Highly durable SiC nMISFET's at 450 °C

AU - Zhu, W. J.

AU - Wang, X. W.

AU - Ma, T. P.

AU - Tucker, Jesse B.

AU - Rao, Mulpuri V.

PY - 2000

Y1 - 2000

N2 - Enhancement-mode nMISFET's fabricated on 6H-SiC substrates exhibit remarkable reliability and durability at high temperatures. These devices incorporate ONO (oxide-nitride-oxide) gate dielectrics made by the JVD (Jet-Vapor Deposition) method. Projected operating lifetimes of over 200 years under an oxide field of 3 MV/cm, and over 10 years under a field of 3.6 MV/cm, have been demonstrated at 450 °C. These values are believed to far exceed the best data reported to date.

AB - Enhancement-mode nMISFET's fabricated on 6H-SiC substrates exhibit remarkable reliability and durability at high temperatures. These devices incorporate ONO (oxide-nitride-oxide) gate dielectrics made by the JVD (Jet-Vapor Deposition) method. Projected operating lifetimes of over 200 years under an oxide field of 3 MV/cm, and over 10 years under a field of 3.6 MV/cm, have been demonstrated at 450 °C. These values are believed to far exceed the best data reported to date.

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UR - http://www.scopus.com/inward/citedby.url?scp=0343006652&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0343006652

SN - 0255-5476

VL - 338

SP - II/-

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Highly durable SiC nMISFET's at 450 °C

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