Keyphrases
Highly Accurate
100%
Schottky Barrier
100%
Graphene Nanoribbon
100%
Single Gate
100%
Double Gate
100%
Technology Scaling
100%
Graphene FET
100%
SPICE-compatible
100%
Barrier Types
100%
Field-effect Transistors
90%
Si CMOS
60%
Power Delay Product
50%
Compact Model
20%
Process Variation
20%
Non-ideality
20%
Multi-gate
20%
Circuit Simulation
10%
Design Parameters
10%
Analytical Model
10%
Graphene
10%
Circuit Level
10%
Design Process
10%
Physics-based
10%
Downscaling
10%
Edge Roughness
10%
Accuracy Improvement
10%
Channel Current
10%
Current-voltage (I-V) Characteristics
10%
Parameter Variation
10%
Accurate Approximation
10%
Circuit-level Simulation
10%
Generation Technology
10%
Scalability Study
10%
Schottky Barrier Tunneling
10%
Product Advantage
10%
Process Variation Effect
10%
Field Effect Transistor Circuits
10%
Channel Charges
10%
Technology Node
10%
Engineering
Graphene
100%
Schottky Barrier
100%
SPICE
100%
Field-Effect Transistor
90%
Energy Engineering
45%
Process Variation
27%
Tunnel Construction
9%
Design Parameter
9%
Assuming
9%
Analytical Model
9%
Nodes
9%
Current-Voltage Characteristic
9%
Circuit Simulation
9%
Edge Roughness
9%
Design Process
9%
Closed Form
9%
Parameter Variation
9%
Generation Technology
9%
Material Science
Schottky Barrier
100%
Graphene
100%
Field Effect Transistor
90%
Electronic Circuit
45%
Current-Voltage Characteristic
9%