HIGH VOLUME PRODUCTION GROWTH OF GaAs ON SILICON SUBSTRATES.

Keyphrases

• Gallium Arsenide 100%
• Production Growth 100%
• High Volume Production 100%
• Silicon Substrate 66%
• Reactor 66%
• GaAs on Silicon 66%
• Single Crystal 33%
• Metal-organic Chemical Vapor Deposition (MOCVD) 33%
• Wafer 33%
• P-type 33%
• Epitaxial 33%
• Photoluminescence Spectra 33%
• Four-point 33%
• Antiphase Boundary 33%
• Rocking Curve 33%
• Wafer Surface 33%
• Thickness Uniformity 33%
• Growth Techniques 33%
• Material Growth 33%
• Schottky Diode 33%
• GaAs Surface 33%
• (100) Silicon 33%
• Maximum Capacity 33%
• Customized System 33%
• Silicon Material 33%
• Wafer Thickness 33%
• Wafer-to-wafer 33%

Engineering

• Gallium Arsenide 100%
• High Volume Production 100%
• Silicon Substrate 33%
• Silicon Material 16%