HIGH VOLUME PRODUCTION GROWTH OF GaAs ON SILICON SUBSTRATES.

Chris R. Ito, M. Feng, V. K. Eu, H. B. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A high-volume epitaxial reactor has been used to investigate the feasibility for the production growth of GaAs on silicon substrates. The reactor is a customized system which has a maximum capacity of 39 three-inch diam wafers and can accommodate substrates as large as eight inches in diameter. The MOCVD materials growth technique was used to grow GaAs directly on p-type, (100) silicon substrates, three and five inches in diam. The GaAs surfaces were textured with antiphase boundaries. Double-cyrstal rocking curve measurements showed single-crystal GaAs with an average FWHM of 520 arc seconds measured at four points over the wafer surface. Within-wafer thickness uniformity was plus or minus 4% with a wafer-to-wafer uniformity of plus or minus 2%. Photoluminescence spectra showed four peaks at 1. 500, 1,483, 1. 464, and 1. 440 ev. Schottky diodes were fabricated on the GaAs on silicon material.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages197-201
Number of pages5
ISBN (Print)0931837332, 9780931837333
DOIs
StatePublished - Jan 1 1986
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume67
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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