@inproceedings{f5220adf65ca4c17b59d5a8b406ceaee,
title = "HIGH VOLUME PRODUCTION GROWTH OF GaAs ON SILICON SUBSTRATES.",
abstract = "A high-volume epitaxial reactor has been used to investigate the feasibility for the production growth of GaAs on silicon substrates. The reactor is a customized system which has a maximum capacity of 39 three-inch diam wafers and can accommodate substrates as large as eight inches in diameter. The MOCVD materials growth technique was used to grow GaAs directly on p-type, (100) silicon substrates, three and five inches in diam. The GaAs surfaces were textured with antiphase boundaries. Double-cyrstal rocking curve measurements showed single-crystal GaAs with an average FWHM of 520 arc seconds measured at four points over the wafer surface. Within-wafer thickness uniformity was plus or minus 4% with a wafer-to-wafer uniformity of plus or minus 2%. Photoluminescence spectra showed four peaks at 1. 500, 1,483, 1. 464, and 1. 440 ev. Schottky diodes were fabricated on the GaAs on silicon material.",
author = "Ito, {Chris R.} and M. Feng and Eu, {V. K.} and Kim, {H. B.}",
year = "1986",
doi = "10.1557/proc-67-197",
language = "English (US)",
isbn = "0931837332",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "197--201",
booktitle = "Materials Research Society Symposia Proceedings",
}