High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate

V. Kumar, A. Kuliev, T. Tanaka, Y. Otoki, I. Adesida

Research output: Contribution to journalArticlepeer-review


Using inductively-coupled-plasma reactive ion etching (ICP-RIE), recessed 1 μm gate-length enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated. These 1 μm gate-length devices exhibited maximum drain current density of 470 mA/mm, extrinsic transconductance of 248 mS/mm and threshold voltage of 75 mV. These characteristics are much higher than previously reported values for GaN-based E-mode HEMTs. A unity gain cutoff frequency (fr) of 8 GHz and a maximum frequency of oscillation (fmax) of 26 GHz were also measured on these devices.

Original languageEnglish (US)
Pages (from-to)1758-1760
Number of pages3
JournalElectronics Letters
Issue number24
StatePublished - Nov 27 2003

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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