High thermal conductivity of a hydrogenated amorphous silicon film

Xiao Liu, J. L. Feldman, D. G. Cahill, R. S. Crandall, N. Bernstein, D. M. Photiadis, M. J. Mehl, D. A. Papaconstantopoulos

Research output: Contribution to journalArticlepeer-review


We measured the thermal conductivity κ of an 80μm thick hydrogenated amorphous silicon film prepared by hot-wire chemical-vapor deposition with the 3ω (80-300 K) and the time-domain thermoreflectance (300 K) methods. The κ is higher than any of the previous temperature dependent measurements and shows a strong phonon mean free path dependence. We also applied a Kubo based theory using a tight-binding method on three 1000 atom continuous random network models. The theory gives higher κ for more ordered models, but not high enough to explain our results, even after extrapolating to lower frequencies with a Boltzmann approach. Our results show that this material is more ordered than any amorphous silicon previously studied.

Original languageEnglish (US)
Article number035901
JournalPhysical review letters
Issue number3
StatePublished - Jan 20 2009

ASJC Scopus subject areas

  • General Physics and Astronomy


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