High thermal conductivity in cubic boron arsenide crystals

Sheng Li, Qiye Zheng, Yinchuan Lv, Xiaoyuan Liu, Xiqu Wang, Pinshane Y. Huang, David G. Cahill, Bing Lv

Research output: Contribution to journalArticle

Abstract

The high density of heat generated in power electronics and optoelectronic devices is a critical bottleneck in their application. New materials with high thermal conductivity are needed to effectively dissipate heat and thereby enable enhanced performance of power controls, solid-state lighting, communication, and security systems. We report the experimental discovery of high thermal conductivity at room temperature in cubic boron arsenide (BAs) grown through a modified chemical vapor transport technique. The thermal conductivity of BAs, 1000 ± 90 watts per meter per kelvin meter-kelvin, is higher than that of silicon carbide by a factor of 3 and is surpassed only by diamond and the basal-plane value of graphite. This work shows that BAs represents a class of ultrahigh–thermal conductivity materials predicted by a recent theory, and that it may constitute a useful thermal management material for high–power density electronic devices.

Original languageEnglish (US)
Pages (from-to)579-581
Number of pages3
JournalScience
Volume361
Issue number6402
DOIs
StatePublished - Aug 10 2018

    Fingerprint

ASJC Scopus subject areas

  • General

Cite this