High-temperature thermoelectric response of double-doped SrTiO3 epitaxial films

J. Ravichandran, W. Siemons, D. W. Oh, J. T. Kardel, A. Chari, H. Heijmerikx, M. L. Scullin, A. Majumdar, R. Ramesh, D. G. Cahill

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Abstract

SrTiO3 is a promising n -type oxide semiconductor for thermoelectric energy conversion. Epitaxial thin films of SrTiO3 doped with both La and oxygen vacancies have been synthesized by pulsed laser deposition. The thermoelectric and galvanomagnetic properties of these films have been characterized at temperatures ranging from 300 to 900 K and are typical of a doped semiconductor. Thermopower values of double-doped films are comparable to previous studies of La-doped single crystals at similar carrier concentrations. The highest thermoelectric figure of merit (ZT) was measured to be 0.28 at 873 K at a carrier concentration of 2.5× 1021 cm-3.

Original languageEnglish (US)
Article number165126
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number16
DOIs
StatePublished - Oct 28 2010

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Ravichandran, J., Siemons, W., Oh, D. W., Kardel, J. T., Chari, A., Heijmerikx, H., Scullin, M. L., Majumdar, A., Ramesh, R., & Cahill, D. G. (2010). High-temperature thermoelectric response of double-doped SrTiO3 epitaxial films. Physical Review B - Condensed Matter and Materials Physics, 82(16), [165126]. https://doi.org/10.1103/PhysRevB.82.165126